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Datasheets for F640

Datasheets found :: 281
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 IRF640NSTRL 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
92 IRF640NSTRLPBF 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
93 IRF640NSTRR 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
94 IRF640NSTRRPBF 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
95 IRF640PBF 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
96 IRF640S 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
97 IRF640S N-channel TrenchMOS transistor Philips
98 IRF640S N - CHANNEL 200V - 0.150Ohm - 18A TO-263 MESH OVERLAY MOSFET SGS Thomson Microelectronics
99 IRF640S N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET ST Microelectronics
100 IRF640SPBF 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
101 IRF640STR 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
102 IRF640STRL 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
103 IRF640STRR 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
104 IRHLF640Z4 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package International Rectifier
105 K4F640412D 16M x 4bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
106 K4F640412D-JC_L 16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. Samsung Electronic
107 K4F640412D-TC_L 16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. Samsung Electronic
108 K4F640811B 8M x 8bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
109 K4F640811B-JC-45 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns Samsung Electronic
110 K4F640811B-JC-50 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
111 K4F640811B-JC-60 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
112 K4F640811B-TC-45 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns Samsung Electronic
113 K4F640811B-TC-50 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
114 K4F640811B-TC-60 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
115 K4F640812D 8M x 8bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
116 K4F640812D-JC_L 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. Samsung Electronic
117 K4F640812D-TC_L 8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. Samsung Electronic
118 K4F660411D, K4F640411D 16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
119 K4F660412D, K4F640412D 16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
120 K4F660412D, K4F640412D 16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic


Datasheets found :: 281
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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