No. |
Part Name |
Description |
Manufacturer |
91 |
IRF640NSTRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
92 |
IRF640NSTRLPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
93 |
IRF640NSTRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
94 |
IRF640NSTRRPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
95 |
IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
96 |
IRF640S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
97 |
IRF640S |
N-channel TrenchMOS transistor |
Philips |
98 |
IRF640S |
N - CHANNEL 200V - 0.150Ohm - 18A TO-263 MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
99 |
IRF640S |
N-CHANNEL 200V - 0.150 OHM -18A TO-263 MESH OVERLAY MOSFET |
ST Microelectronics |
100 |
IRF640SPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
101 |
IRF640STR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
102 |
IRF640STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
103 |
IRF640STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
104 |
IRHLF640Z4 |
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package |
International Rectifier |
105 |
K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
106 |
K4F640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
107 |
K4F640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
108 |
K4F640811B |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
109 |
K4F640811B-JC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
110 |
K4F640811B-JC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
111 |
K4F640811B-JC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
112 |
K4F640811B-TC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
113 |
K4F640811B-TC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
114 |
K4F640811B-TC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
115 |
K4F640812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
116 |
K4F640812D-JC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
117 |
K4F640812D-TC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
118 |
K4F660411D, K4F640411D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
119 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
120 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
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