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Datasheets for IRF2

Datasheets found :: 190
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No. Part Name Description Manufacturer
91 IRF242 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs Intersil
92 IRF242 N-CHANNEL POWER MOSFET Samsung Electronic
93 IRF243 N-Channel Power MOSFETs/ 18A/ 150-200V Fairchild Semiconductor
94 IRF243 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
95 IRF243 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs Intersil
96 IRF243 N-CHANNEL POWER MOSFET Samsung Electronic
97 IRF244 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs Intersil
98 IRF245 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs Intersil
99 IRF246 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs Intersil
100 IRF247 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs Intersil
101 IRF250 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
102 IRF250 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package International Rectifier
103 IRF250 30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET Intersil
104 IRF250 Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
105 IRF250 N-CHANNEL POWER MOSFETS Samsung Electronic
106 IRF250 N-CHANNEL POWER MOSFET SemeLAB
107 IRF250CF Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
108 IRF250FI Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
109 IRF250R Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
110 IRF250SMD N.CHANNEL POWER MOSFET SemeLAB
111 IRF251 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
112 IRF251 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs Intersil
113 IRF251 Trans MOSFET 150V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
114 IRF251 N-CHANNEL POWER MOSFETS Samsung Electronic
115 IRF252 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. General Electric Solid State
116 IRF252 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs Intersil
117 IRF252 Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
118 IRF252 N-CHANNEL POWER MOSFETS Samsung Electronic
119 IRF252R Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
120 IRF253 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. General Electric Solid State


Datasheets found :: 190
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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