No. |
Part Name |
Description |
Manufacturer |
91 |
IRF242 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
92 |
IRF242 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
93 |
IRF243 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
94 |
IRF243 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. |
General Electric Solid State |
95 |
IRF243 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
96 |
IRF243 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
97 |
IRF244 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
98 |
IRF245 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
99 |
IRF246 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
100 |
IRF247 |
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs |
Intersil |
101 |
IRF250 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
102 |
IRF250 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
103 |
IRF250 |
30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET |
Intersil |
104 |
IRF250 |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
105 |
IRF250 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
106 |
IRF250 |
N-CHANNEL POWER MOSFET |
SemeLAB |
107 |
IRF250CF |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
108 |
IRF250FI |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
109 |
IRF250R |
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
110 |
IRF250SMD |
N.CHANNEL POWER MOSFET |
SemeLAB |
111 |
IRF251 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
112 |
IRF251 |
25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs |
Intersil |
113 |
IRF251 |
Trans MOSFET 150V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
114 |
IRF251 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
115 |
IRF252 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
116 |
IRF252 |
25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs |
Intersil |
117 |
IRF252 |
Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
118 |
IRF252 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
119 |
IRF252R |
Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
120 |
IRF253 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
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