No. |
Part Name |
Description |
Manufacturer |
91 |
IRF830A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
92 |
IRF830AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
93 |
IRF830APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
94 |
IRF830AS |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
95 |
IRF830AS |
Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
96 |
IRF830B |
500V N-Channel MOSFET |
Fairchild Semiconductor |
97 |
IRF830FI |
Trans MOSFET 500V 3A 3-Pin(3+Tab) ISOWATT220 |
New Jersey Semiconductor |
98 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
99 |
IRF830PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
100 |
IRF830R |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
101 |
IRF830S |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
102 |
IRF830STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
103 |
IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
104 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
105 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
106 |
IRF831 |
Trans MOSFET N-CH 450V 4.5A |
New Jersey Semiconductor |
107 |
IRF8313 |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
108 |
IRF8313PBF |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
109 |
IRF8313TRPBF |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
110 |
IRF832 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
111 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
112 |
IRF832 |
Trans MOSFET N-CH 500V 4A |
New Jersey Semiconductor |
113 |
IRF8327S |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. |
International Rectifier |
114 |
IRF8327STR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. |
International Rectifier |
115 |
IRF833 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
116 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
117 |
IRF833 |
Trans MOSFET N-CH 450V 4A |
New Jersey Semiconductor |
118 |
IRF840 |
8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
119 |
IRF840 |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
120 |
IRF840 |
8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET |
Intersil |
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