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Datasheets for P M

Datasheets found :: 20667
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2N6051 12A P-N-P monolithic darlington power transistor. General Electric Solid State
92 2N6052 12A P-N-P monolithic darlington power transistor. General Electric Solid State
93 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
94 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
95 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
96 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
97 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
98 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
99 2N6467 Silicon P-N-P medium-power transistor. -110V, 40W. General Electric Solid State
100 2N6468 Silicon P-N-P medium-power transistor. -130V, 40W. General Electric Solid State
101 2N7002E 60V; 0.25A; N-channel enchanced mode field effect transistor SamHop Microelectronics Corp.
102 2SA1977-L Transistor for amplifying PNP micro wave NEC
103 2SA1977-T1 Transistor for amplifying PNP micro wave NEC
104 2SA1977-T1B Transistor for amplifying PNP micro wave NEC
105 2SA234 Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter Hitachi Semiconductor
106 2SA235 Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter Hitachi Semiconductor
107 2SAR293P5 PNP Middle Power Driver Transistor (-30V / -1.0A) ROHM
108 2SAR293P5T100 PNP Middle Power Driver Transistor (-30V / -1.0A) ROHM
109 30S 3 AMP MEDIUM POWER SILICON RECTIFIER DIODES Microsemi
110 30S5 3 AMP MEDIUM POWER SILICON RECTIFIER DIODES Microsemi
111 319SPA-V6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
112 319SPA-W6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
113 319SPA-X6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
114 5962-8997501PA Wideband, Closed-Loop Monolithic Buffer National Semiconductor
115 5962-8997501PA Wideband, Closed-Loop Monolithic Buffer National Semiconductor
116 5962-9466307QXA Non-RadHard enhanced SuMMIT LXE15 MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Class Q. Lead finish solder. Radiation none. Aeroflex Circuit Technology
117 5962-9466307QXC Non-RadHard enhanced SuMMIT LXE15 MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Class Q. Lead finish gold. Radiation none. Aeroflex Circuit Technology
118 5962-9466307QXX Non-RadHard enhanced SuMMIT LXE15 MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Class Q. Lead finish optional. Radiation none. Aeroflex Circuit Technology
119 5962-9466307QYA Non-RadHard enhanced SuMMIT LXE15 MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Class Q. Lead finish solder. Radiation none. Aeroflex Circuit Technology
120 5962-9466307QYC Non-RadHard enhanced SuMMIT LXE15 MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Class Q. Lead finish gold. Radiation none. Aeroflex Circuit Technology


Datasheets found :: 20667
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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