No. |
Part Name |
Description |
Manufacturer |
91 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
92 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
93 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
94 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
95 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
96 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
97 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
98 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
99 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
100 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
101 |
2N7002E |
60V; 0.25A; N-channel enchanced mode field effect transistor |
SamHop Microelectronics Corp. |
102 |
2SA1977-L |
Transistor for amplifying PNP micro wave |
NEC |
103 |
2SA1977-T1 |
Transistor for amplifying PNP micro wave |
NEC |
104 |
2SA1977-T1B |
Transistor for amplifying PNP micro wave |
NEC |
105 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
106 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
107 |
2SAR293P5 |
PNP Middle Power Driver Transistor (-30V / -1.0A) |
ROHM |
108 |
2SAR293P5T100 |
PNP Middle Power Driver Transistor (-30V / -1.0A) |
ROHM |
109 |
30S |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
Microsemi |
110 |
30S5 |
3 AMP MEDIUM POWER SILICON RECTIFIER DIODES |
Microsemi |
111 |
319SPA-V6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
112 |
319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
113 |
319SPA-X6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
114 |
5962-8997501PA |
Wideband, Closed-Loop Monolithic Buffer |
National Semiconductor |
115 |
5962-8997501PA |
Wideband, Closed-Loop Monolithic Buffer |
National Semiconductor |
116 |
5962-9466307QXA |
Non-RadHard enhanced SuMMIT LXE15 MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Class Q. Lead finish solder. Radiation none. |
Aeroflex Circuit Technology |
117 |
5962-9466307QXC |
Non-RadHard enhanced SuMMIT LXE15 MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Class Q. Lead finish gold. Radiation none. |
Aeroflex Circuit Technology |
118 |
5962-9466307QXX |
Non-RadHard enhanced SuMMIT LXE15 MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Class Q. Lead finish optional. Radiation none. |
Aeroflex Circuit Technology |
119 |
5962-9466307QYA |
Non-RadHard enhanced SuMMIT LXE15 MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Class Q. Lead finish solder. Radiation none. |
Aeroflex Circuit Technology |
120 |
5962-9466307QYC |
Non-RadHard enhanced SuMMIT LXE15 MIL-STD-1553 dual redundant bus controller/remote terminal/monitor/transceiver multichip module: SMD. Class Q. Lead finish gold. Radiation none. |
Aeroflex Circuit Technology |
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