No. |
Part Name |
Description |
Manufacturer |
91 |
1S1941 |
Silicon diffused junction rectifier 0.5A 100V |
TOSHIBA |
92 |
1S1942 |
Silicon diffused junction rectifier 0.5A 200V |
TOSHIBA |
93 |
1S1943 |
Silicon diffused junction rectifier 0.5A 400V |
TOSHIBA |
94 |
1S1944 |
Silicon diffused junction rectifier 0.5A 600V |
TOSHIBA |
95 |
1S2233 |
Silicon diffused junction rectifier 1.5A 600V |
TOSHIBA |
96 |
1S2234 |
Silicon diffused junction rectifier 1.5A 800V |
TOSHIBA |
97 |
1S2235 |
Silicon diffused junction rectifier 1.5A 1000V |
TOSHIBA |
98 |
1S2237B |
Silicon diffused junction high-voltage rectifier, 18kV |
TOSHIBA |
99 |
1S2576 |
Silicon diffused junction rectifier 1A 100V |
TOSHIBA |
100 |
1S2577 |
Silicon diffused junction rectifier 1A 200V |
TOSHIBA |
101 |
1S2578 |
Silicon diffused junction rectifier 1A 400V |
TOSHIBA |
102 |
1S2579 |
Silicon diffused junction rectifier 1A 600V |
TOSHIBA |
103 |
1S2580 |
Silicon diffused junction rectifier 1A 800V |
TOSHIBA |
104 |
1S2581 |
Silicon diffused junction rectifier 1A 1000V |
TOSHIBA |
105 |
1S2582 |
Silicon diffused junction rectifier 3A 100V |
TOSHIBA |
106 |
1S2583 |
Silicon diffused junction rectifier 3A 200V |
TOSHIBA |
107 |
1S2584 |
Silicon diffused junction rectifier 3A 400V |
TOSHIBA |
108 |
1S2585 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
109 |
1S2586 |
Silicon diffused junction rectifier 3A 800V |
TOSHIBA |
110 |
1S2615 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
111 |
1S2616 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
112 |
1S2617 |
Silicon diffused junction fast recovery rectifier |
TOSHIBA |
113 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
114 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
115 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
116 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
117 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
118 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
119 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
120 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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