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Datasheets for SILICON DIFFUSED

Datasheets found :: 653
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 1S1941 Silicon diffused junction rectifier 0.5A 100V TOSHIBA
92 1S1942 Silicon diffused junction rectifier 0.5A 200V TOSHIBA
93 1S1943 Silicon diffused junction rectifier 0.5A 400V TOSHIBA
94 1S1944 Silicon diffused junction rectifier 0.5A 600V TOSHIBA
95 1S2233 Silicon diffused junction rectifier 1.5A 600V TOSHIBA
96 1S2234 Silicon diffused junction rectifier 1.5A 800V TOSHIBA
97 1S2235 Silicon diffused junction rectifier 1.5A 1000V TOSHIBA
98 1S2237B Silicon diffused junction high-voltage rectifier, 18kV TOSHIBA
99 1S2576 Silicon diffused junction rectifier 1A 100V TOSHIBA
100 1S2577 Silicon diffused junction rectifier 1A 200V TOSHIBA
101 1S2578 Silicon diffused junction rectifier 1A 400V TOSHIBA
102 1S2579 Silicon diffused junction rectifier 1A 600V TOSHIBA
103 1S2580 Silicon diffused junction rectifier 1A 800V TOSHIBA
104 1S2581 Silicon diffused junction rectifier 1A 1000V TOSHIBA
105 1S2582 Silicon diffused junction rectifier 3A 100V TOSHIBA
106 1S2583 Silicon diffused junction rectifier 3A 200V TOSHIBA
107 1S2584 Silicon diffused junction rectifier 3A 400V TOSHIBA
108 1S2585 Silicon diffused junction rectifier 3A 600V TOSHIBA
109 1S2586 Silicon diffused junction rectifier 3A 800V TOSHIBA
110 1S2615 Silicon diffused junction fast recovery rectifier TOSHIBA
111 1S2616 Silicon diffused junction fast recovery rectifier TOSHIBA
112 1S2617 Silicon diffused junction fast recovery rectifier TOSHIBA
113 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
114 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
115 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
116 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
117 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
118 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
119 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
120 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor


Datasheets found :: 653
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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