| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 2 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 3 |
0R6UXZ31 |
Silicon diffused junction high-voltage rectifier 14kV 600mA |
TOSHIBA |
| 4 |
1.00E+01 |
SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 5 |
1.00E+02 |
SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 6 |
1.00E+03 |
SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 7 |
1.00E+04 |
SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 8 |
1.00E+05 |
SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 9 |
100JB6L |
V(rrm): 600V; 10A rectifier bridge |
International Rectifier |
| 10 |
10DF6 |
Diode Switching 600V 1A 2-Pin DO-204AL |
New Jersey Semiconductor |
| 11 |
10ELS6 |
HIGH SURGE CAPABILITY 100VOLTS TROUGH 600VOLTS TYPE AVAILABLE |
Nihon |
| 12 |
10PM6AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 600V |
IPRS Baneasa |
| 13 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
| 14 |
10SI6R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 600V |
IPRS Baneasa |
| 15 |
12JC11 |
Silicon diffused junction rectifier 600V 12A |
TOSHIBA |
| 16 |
1504-600E |
Delay 600 +/-30 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 17 |
1504-600F |
Delay 600 +/-30 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 18 |
1504-600G |
Delay 600 +/-30 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 19 |
15048-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 600VDC |
NTE Electronics |
| 20 |
150K60 |
Diode Switching 600V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 21 |
150K60A |
Diode Switching 600V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 22 |
150KR60 |
Diode Switching 600V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 23 |
150KR60A |
Diode Switching 600V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 24 |
150KS60 |
Diode Switching 600V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
| 25 |
150KSR60 |
Diode Switching 600V 150A 2-Pin Case B-42 |
New Jersey Semiconductor |
| 26 |
160PFT100 |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 27 |
160PFT100A |
V(rrm/drm): 1000V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 28 |
160PFT120 |
V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 29 |
160PFT120A |
V(rrm/drm): 1200V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 30 |
160PFT140 |
V(rrm/drm): 1400V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
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