| No. |
Part Name |
Description |
Manufacturer |
| 1 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 2 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 3 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 4 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 5 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 6 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 7 |
ACPM-7891 |
ACPM-7891 · Tri-band GPRS (Class10) GSM PA |
Agilent (Hewlett-Packard) |
| 8 |
BTS430K2 |
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation) |
Siemens |
| 9 |
BTS432D2 |
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown) |
Siemens |
| 10 |
BTS432E2 |
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown) |
Siemens |
| 11 |
BTS432F2 |
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation) |
Siemens |
| 12 |
BTS432I2 |
Smart Highside Power Switch (Clamp of negative voltage at output Short-circuit protection Current limitation Thermal shutdown) |
Siemens |
| 13 |
CL-GD5462 |
64-Bit Graphics Engine with Integrated 3D Game Acceleration(CL-GD5464) |
Cirrus Logic |
| 14 |
CL-GD54622D |
64-Bit Graphics Engine with Integrated 3D Game Acceleration(CL-GD5464) |
Cirrus Logic |
| 15 |
CL-GD5464 |
64-Bit Graphics Engine with Integrated 3D Game Acceleration(CL-GD5464) |
Cirrus Logic |
| 16 |
CL-GD54643D |
64-Bit Graphics Engine with Integrated 3D Game Acceleration(CL-GD5464) |
Cirrus Logic |
| 17 |
CL-GD5465 |
64-Bit Graphics Engine with Integrated 3D Game Acceleration(CL-GD5464) |
Cirrus Logic |
| 18 |
CL-GD5465AGP |
64-Bit Graphics Engine with Integrated 3D Game Acceleration(CL-GD5464) |
Cirrus Logic |
| 19 |
CL-GD546X |
64-Bit Graphics Engine with Integrated 3D Game Acceleration(CL-GD5464) |
Cirrus Logic |
| 20 |
KM44S3203BT-G_F10 |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). |
Samsung Electronic |
| 21 |
KM44S3203BT-G_F8 |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). |
Samsung Electronic |
| 22 |
KM44S3203BT-G_FA |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 133 MHz (CL=3). |
Samsung Electronic |
| 23 |
KM44S3203BT-G_FH |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=2). |
Samsung Electronic |
| 24 |
KM44S3203BT-G_FL |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz (CL=3). |
Samsung Electronic |
| 25 |
LXP600A |
Low-Jitter Clock Adapters(CLADs) |
Level One |
| 26 |
LXP602 |
Low-Jitter Clock Adapters(CLADs) |
Level One |
| 27 |
LXP604 |
Low-Jitter Clock Adapters(CLADs) |
Level One |
| 28 |
LXP610 |
Low-Jitter Multi-Rate Clock Adapter(CLAD) |
Level One |
| 29 |
MAX4295 |
Mono/Stereo, 2W, Switch-Mode (Class-D) Audio Power Amplifiers |
MAXIM - Dallas Semiconductor |
| 30 |
MAX4295EEE |
Mono/Stereo 2W Switch-Mode (Class-D) Audio Power Amplifiers |
MAXIM - Dallas Semiconductor |
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