No. |
Part Name |
Description |
Manufacturer |
1 |
2N7000 |
60 V, N-channel-enhancement |
TRANSYS Electronics Limited |
2 |
2N7002LT1 |
60 V, N-channel enhancement |
TRANSYS Electronics Limited |
3 |
AN0110NA |
100 V, 100 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
4 |
AN0120NA |
200 V, 300 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
5 |
AN0130NA |
300 V, 300 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
6 |
AN0140NA |
400 V, 350 om, N-channel enhancement-mode D-MOS FET 8-channel array |
Topaz Semiconductor |
7 |
IRF241 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
8 |
IRF242 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
9 |
IRF243 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
10 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
11 |
MRF151G |
300 W, 50 V, N-channel broadband RF power MOSFET |
MA-Com |
12 |
MRF154 |
600 W, 50 V, N-channel broadband RF power MOSFET |
MA-Com |
13 |
MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
14 |
MRF18030B |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
15 |
MRF185_D |
MRF185 1 GHz, 85 W, 28 V Lateral N-Channel Broadband RF Power MOSFET |
Motorola |
16 |
MRF186_D |
MRF186 1 GHz, 120 W, 28 V Lateral N-Channel Broadband RF Power MOSFET |
Motorola |
17 |
MRF19085 |
MRF19085, MRF19085R3, MRF19085SR3, MRF19085LSR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
18 |
MRF21085 |
MRF21085, MRF21085R3, MRF21085SR3, MRF21085LSR3 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
19 |
MRF5S19100L |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
20 |
MRF5S19130 |
MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
21 |
MRF5S21100H |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
22 |
MRF9080 |
MRF9080, MRF9080R3, MRF9080SR3, MRF9080LSR3 GSM 900 MHz, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs |
Motorola |
23 |
MRF9085 |
MRF9085, MRF9085R3, MRF9085SR3, MRF9085LSR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs |
Motorola |
24 |
MRF9130L |
MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
25 |
MTB15N06V |
15 A D2PAK N-Channel MOSFET, VDSS 60 |
ON Semiconductor |
26 |
MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
27 |
MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
28 |
NTD6600N |
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK |
ON Semiconductor |
29 |
SD1100CHP |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
30 |
SD1100DD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
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