No. |
Part Name |
Description |
Manufacturer |
1 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
2 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
3 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
4 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
5 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
6 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
7 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
8 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
9 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
10 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
11 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
12 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
13 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
14 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
15 |
2N3637 |
140V/175 , 1A PNP Small Signal Transistor - TO-39 & TO-5 |
ON Semiconductor |
16 |
2N6034 |
PNP medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
17 |
2N6035 |
PNP medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
18 |
2N6037 |
NPN medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
19 |
2N6038 |
NPN medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
20 |
2SC5536 |
NPN Epitaxial Planar Silicon Transistor VHF Low-Noise Amplifier , OSC Applications |
SANYO |
21 |
300190-9 , 300210-12 (2R, 3R, 4R) |
2 Resistors through X Resistors |
Vishay |
22 |
592D |
Solid Tantalum Chip Capacitors, TANTAMOUNT ® , Low Profile, Conformal Terminals, Maximum C/V, Extended Range Offerings, New A Case Size Offering |
Vishay |
23 |
5962-8876403XX |
High Speed , 8-Channel, 8-Bit CMOS ADC |
Analog Devices |
24 |
5962-88764043A |
High Speed , 8-Channel, 8-Bit CMOS ADC |
Analog Devices |
25 |
5962-8876404XX |
High Speed , 8-Channel, 8-Bit CMOS ADC |
Analog Devices |
26 |
5962-9457201MEA |
Dual , Low Noise, Wideband Variable Gain Amplifier, 0 dB To +40 dB Gain |
Analog Devices |
27 |
67023 |
HERMETIC , NUMERIC AND HEXADECIMAL DISPLAYS |
Micropac Industries |
28 |
67023-001 |
HERMETIC , NUMERIC AND HEXADECIMAL DISPLAYS |
Micropac Industries |
29 |
67023-002 |
HERMETIC , NUMERIC AND HEXADECIMAL DISPLAYS |
Micropac Industries |
30 |
67023-003 |
HERMETIC , NUMERIC AND HEXADECIMAL DISPLAYS |
Micropac Industries |
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