| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1268W100R |
Bulk Metal Foil Technology Precision Trimming Potentiometers 3/8 Inch Square/ RJ24 Style - Industrial Trimmer |
Vishay |
| 2 |
ADC100 |
High Resolution - Integrating ANALOG-TO-DIGITAL Converter |
Burr Brown |
| 3 |
ADC100BCD |
High Resolution - Integrating ANALOG-TO-DIGITAL Converter |
Burr Brown |
| 4 |
ADC100BOB |
High Resolution - Integrating ANALOG-TO-DIGITAL Converter |
Burr Brown |
| 5 |
ADC100SMD |
High Resolution - Integrating ANALOG-TO-DIGITAL Converter |
Burr Brown |
| 6 |
ADC100USB |
High Resolution - Integrating ANALOG-TO-DIGITAL Converter |
Burr Brown |
| 7 |
AN1050 |
ST6 - INPUT CAPTURE WITH ST62 16-BIT AUTO-RELOAD TIMER |
SGS Thomson Microelectronics |
| 8 |
AN1275 |
ST9 - IN-APPLICATION PROGRAMMING FOR THE ST92F120 |
SGS Thomson Microelectronics |
| 9 |
AN413 |
ST9 - INITIALIZATION OF THE ST9 |
SGS Thomson Microelectronics |
| 10 |
AN591 |
ST6 - INPUT CAPTURE WITH ST62 AUTO-RELOAD CAPTURE |
SGS Thomson Microelectronics |
| 11 |
AN900 |
MCUS - INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY |
SGS Thomson Microelectronics |
| 12 |
APPLICATION NOTE |
Switching circuits examples - inverter circuit, monostable multivibrator circuit, astable multivibrator circuit, etc. |
TOSHIBA |
| 13 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 14 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 15 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 16 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 17 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 18 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 19 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 20 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 21 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 22 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 23 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 24 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 25 |
BK-10V10T |
Nickel Metal Hydride Batteries - Infrastructure type |
Panasonic |
| 26 |
BK-10V1S |
Nickel Metal Hydride Batteries - Infrastructure type |
Panasonic |
| 27 |
BROCHURE |
Signal Acquisition - Instrumentation Amplifier Brochure |
Burr Brown |
| 28 |
CNZ1402A |
Opto-Electronic Device - Photocouplers�Photosensors - Integrated Photosensors |
Panasonic |
| 29 |
CNZ1402B |
Opto-Electronic Device - Photocouplers�Photosensors - Integrated Photosensors |
Panasonic |
| 30 |
CNZ1403A |
Opto-Electronic Device - Photocouplers�Photosensors - Integrated Photosensors |
Panasonic |
| | | |
