| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6642U |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 2 |
1N6642U01D |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 3 |
1N6642U02D |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 4 |
1N6642UD1 |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 5 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
| 6 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 7 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 8 |
2SAR340P |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 9 |
2SAR340PT100 |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 10 |
2SAR340Q |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 11 |
2SAR340QTR |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 12 |
3LP01M |
P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP |
ON Semiconductor |
| 13 |
7B33 |
Isolated Voltage Input Signal Conditioning Module -100 Hz Bandwidth |
Analog Devices |
| 14 |
7B33-01-1 |
Isolated Voltage Input Signal Conditioning Module -100 Hz Bandwidth |
Analog Devices |
| 15 |
7B33-01-2 |
Isolated Voltage Input Signal Conditioning Module -100 Hz Bandwidth |
Analog Devices |
| 16 |
ATP301 |
P-Channel Power MOSFET, -100V, -28A, 75mOhm, ATPAK |
ON Semiconductor |
| 17 |
AUIRF5210S |
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 18 |
AUIRF5210STRR |
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 19 |
AUIRF9540N |
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
| 20 |
AUIRFR5410 |
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 21 |
AUIRFR5410TR |
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 22 |
BBS3002 |
P-Channel Power MOSFET -60V, -100A, 5.8mOhm, TO-263-2L/TO-263 |
ON Semiconductor |
| 23 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 24 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 25 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 26 |
BC556 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -80V, Vceo= -65V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 27 |
BC557 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 28 |
BC558 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 29 |
BC559 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 30 |
BC560 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
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