| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF9395M |
A -30V Dual P-Channel HEXFET Power MOSFET in a DirectFET MC package rated at -14 amperes optimized with low on resistance |
International Rectifier |
| 2 |
IRF9395MTR1PBF |
A -30V Dual P-Channel HEXFET Power MOSFET in a DirectFET MC package rated at -14 amperes optimized with low on resistance |
International Rectifier |
| 3 |
IRF9395MTRPBF |
A -30V Dual P-Channel HEXFET Power MOSFET in a DirectFET MC package rated at -14 amperes optimized with low on resistance |
International Rectifier |
| 4 |
MJ15002 |
Silicon P-N-P power transistor. -140V, 200W. |
General Electric Solid State |
| 5 |
MJ15004 |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. |
General Electric Solid State |
| 6 |
NTTFS3A08PZ |
Power MOSFET, -20 V, -14 A, Single P CH, ESD, 3.3x3.3x0.8 mm, u8FL Package |
ON Semiconductor |
| 7 |
NVTFS5116PL |
Power MOSFET, -60 V, -14 A, 52 mΩ, Single P-Channel |
ON Semiconductor |
| 8 |
RCA9116C |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 200W. |
General Electric Solid State |
| | | |
