| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 2 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
| 3 |
BUZ905D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V. |
Magnatec |
| 4 |
EN3582 |
Bipolar Transistor, -180V, -160A, Low VCE(sat) PNP Single NMP |
ON Semiconductor |
| 5 |
IRF9383M |
A -30V Single P-Channel HEXFET Power MOSFET in a DirectFET MX package rated at -160 amperes optimized with low on resistance. |
International Rectifier |
| 6 |
IRF9383MTR1PBF |
A -30V Single P-Channel HEXFET Power MOSFET in a DirectFET MX package rated at -160 amperes optimized with low on resistance. |
International Rectifier |
| | | |
