| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
| 2 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 3 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 4 |
2N4398 |
-40 V, -30 A, 200 W, PNP silicon power transistor |
Texas Instruments |
| 5 |
2N4399 |
-60 V, -30 A, 200 W, PNP silicon power transistor |
Texas Instruments |
| 6 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 7 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 8 |
2SA2012 |
Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 9 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 10 |
2SAR512P5 |
PNP -30V -2A Medium Power Transistor |
ROHM |
| 11 |
2SAR512P5T100 |
PNP -30V -2A Medium Power Transistor |
ROHM |
| 12 |
2SAR552P5 |
PNP -30V -3A Medium Power Transistor |
ROHM |
| 13 |
2SAR552P5T100 |
PNP -30V -3A Medium Power Transistor |
ROHM |
| 14 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 15 |
30A02CH |
Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3 |
ON Semiconductor |
| 16 |
30A02MH |
Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single MCPH3 |
ON Semiconductor |
| 17 |
3LP01C |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single CP |
ON Semiconductor |
| 18 |
3LP01M |
P-Channel Small Signal MOSFET -30V -100mA 10.4 OhmsSingle MCP |
ON Semiconductor |
| 19 |
3LP01S |
P-Channel Small Signal MOSFET -30V -0.1A 10.4Ohm Single SMCP |
ON Semiconductor |
| 20 |
AF4407PSA |
V(ds): -30V; V(gs): +-25V; +-50A; P-channel 30-V (D-S) MOSFET |
Anachip |
| 21 |
AF4409PS |
V(ds): -30V; V(gs): +-12V; P-channel 30-V (D-S) MOSFET |
Anachip |
| 22 |
AF4409PSA |
V(ds): -30V; V(gs): +-12V; P-channel 30-V (D-S) MOSFET |
Anachip |
| 23 |
AF4409PSL |
V(ds): -30V; V(gs): +-12V; P-channel 30-V (D-S) MOSFET |
Anachip |
| 24 |
AF4409PSLA |
V(ds): -30V; V(gs): +-12V; P-channel 30-V (D-S) MOSFET |
Anachip |
| 25 |
AF4502CS |
V(ds): N-channel: 30V; P-vhannel: -30; V(gs): N.: 20V ; P.: -25V; P & N-channel 30-V (D-S) MOSFET |
Anachip |
| 26 |
AF4502CSA |
V(ds): N-channel: 30V; P-vhannel: -30; V(gs): N.: 20V ; P.: -25V; P & N-channel 30-V (D-S) MOSFET |
Anachip |
| 27 |
AF4502CSL |
V(ds): N-channel: 30V; P-vhannel: -30; V(gs): N.: 20V ; P.: -25V; P & N-channel 30-V (D-S) MOSFET |
Anachip |
| 28 |
AF4502CSLA |
V(ds): N-channel: 30V; P-vhannel: -30; V(gs): N.: 20V ; P.: -25V; P & N-channel 30-V (D-S) MOSFET |
Anachip |
| 29 |
AF4512CS |
V(ds): N-channel: 30V; P-vhannel: -30; V(gs): N.: 20V ; P.: -25V; P & N-channel 30-V (D-S) MOSFET |
Anachip |
| 30 |
AF4512CSA |
V(ds): N-channel: 30V; P-vhannel: -30; V(gs): N.: 20V ; P.: -25V; P & N-channel 30-V (D-S) MOSFET |
Anachip |
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