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Datasheets for -4

Datasheets found :: 40971
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No. Part Name Description Manufacturer
1 1,25AND1,0625GBD,LC,2X5,E Transceivers by Form-factor MSA - Mulltimode 850nm -40C to 85C Infineon
2 1A1G04QDBVRG4Q1 Automotive Catalog Single Inverter Gate 5-SOT-23 -40 to 125 Texas Instruments
3 1P1G125QDCKRG4Q1 Automotive Catalog Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 125 Texas Instruments
4 1P1G66QDBVRG4Q1 Automotive Catalog Single Analog Switch 5-SOT-23 -40 to 125 Texas Instruments
5 1S1921B Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V Hitachi Semiconductor
6 2N3905 Planar epitaxial PNP silicon transistor. -40V, 200mA. General Electric Solid State
7 2N3905 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
8 2N3905 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
9 2N3906 Planar epitaxial PNP silicon transistor. -40V, 200mA. General Electric Solid State
10 2N3906 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
11 2N3906 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD
12 2N4402 Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. General Electric Solid State
13 2N4402 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
14 2N4402 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
15 2N4403 Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. General Electric Solid State
16 2N4403 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
17 2N4403 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
18 2N5783 Silicon P-N-P epitaxial-base transistor. -45V, 10W. General Electric Solid State
19 2N6110 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
20 2N6111 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
21 2N6124 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. General Electric Solid State
22 2N6648 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
23 2N6666 10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
24 2SA1366 150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 Isahaya Electronics Corporation
25 2SA1625 High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. USHA India LTD
26 2SA1625 High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. USHA India LTD
27 2SA539 Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. USHA India LTD
28 2SAR340P PNP -100mA -400V Middle Power Transistor ROHM
29 2SAR340PT100 PNP -100mA -400V Middle Power Transistor ROHM
30 2SAR340Q PNP -100mA -400V Middle Power Transistor ROHM


Datasheets found :: 40971
Page: | 1 | 2 | 3 | 4 | 5 |



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