| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1,25AND1,0625GBD,LC,2X5,E |
Transceivers by Form-factor MSA - Mulltimode 850nm -40C to 85C |
Infineon |
| 2 |
1A1G04QDBVRG4Q1 |
Automotive Catalog Single Inverter Gate 5-SOT-23 -40 to 125 |
Texas Instruments |
| 3 |
1P1G125QDCKRG4Q1 |
Automotive Catalog Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 125 |
Texas Instruments |
| 4 |
1P1G66QDBVRG4Q1 |
Automotive Catalog Single Analog Switch 5-SOT-23 -40 to 125 |
Texas Instruments |
| 5 |
1S1921B |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V |
Hitachi Semiconductor |
| 6 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 7 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 8 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 9 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 10 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 11 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 12 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 13 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 15 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 16 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 17 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 18 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
| 19 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
| 20 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 21 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 22 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
| 23 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 24 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 25 |
2SAR340P |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 26 |
2SAR340PT100 |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 27 |
2SAR340Q |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 28 |
2SAR340QTR |
PNP -100mA -400V Middle Power Transistor |
ROHM |
| 29 |
2T03-01QDCKRG4Q1 |
Automotive Catalog Single Voltage Detectors 5-SC70 -40 to 125 |
Texas Instruments |
| 30 |
2T03G15QDCKRG4Q |
Automotive Catalog Single Voltage Detectors 5-SC70 -40 to 125 |
Texas Instruments |
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