No. |
Part Name |
Description |
Manufacturer |
1 |
1S1921C |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V |
Hitachi Semiconductor |
2 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
3 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
4 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
5 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
6 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
7 |
2N5086 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
8 |
2N5087 |
Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
9 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
10 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
11 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
12 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
13 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
14 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
15 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
16 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
17 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
18 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
19 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
20 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
21 |
2SB1314 |
2W Lead frame PNP transistor, maximum rating: -60V Vceo, -3A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
22 |
2SB1340 |
Power Transistor (120V/ -6A) |
ROHM |
23 |
2SD1889 |
Power Transistor (120V/ -6A) |
ROHM |
24 |
2SJ652 |
P-Channel Power MOSFET, -60V, -28A, 38mOhm, TO-220F-3SG |
ON Semiconductor |
25 |
ATP114 |
P-Channel Power MOSFET, -60V, -55A, 16mOhm, Single ATPAK |
ON Semiconductor |
26 |
ATP302 |
P-Channel Power MOSFET, -60V, -70A, 13mOhm, ATPAK |
ON Semiconductor |
27 |
BBS3002 |
P-Channel Power MOSFET -60V, -100A, 5.8mOhm, TO-263-2L/TO-263 |
ON Semiconductor |
28 |
BC556 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -80V, Vceo= -65V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
29 |
BC638 |
Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
30 |
BC638 |
Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
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