| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
| 2 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
| 3 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
| 4 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 5 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 6 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 7 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 8 |
5962-1320201VXC |
1.5 -7V Input, 3 Amp, Ultra Low Dropout Regulator 16-CFP -55 to 125 |
Texas Instruments |
| 9 |
5962R1320201VXC |
1.5 -7V Input, 3 Amp, Ultra Low Dropout Regulator 16-CFP -55 to 125 |
Texas Instruments |
| 10 |
ATP104 |
P-Channel Power MOSFET, -30V, -75A, 8.4mOhm, Single ATPAK |
ON Semiconductor |
| 11 |
ATP302 |
P-Channel Power MOSFET, -60V, -70A, 13mOhm, ATPAK |
ON Semiconductor |
| 12 |
BD240A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. |
General Electric Solid State |
| 13 |
BD242A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. |
General Electric Solid State |
| 14 |
BD244A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. |
General Electric Solid State |
| 15 |
BTS6510 |
Smart High Side Switches - 6mOhm - Vbb(on) = 5V-34V - TO220 -7 |
Infineon |
| 16 |
EMH1303 |
P-Channel Power MOSFET, -12V, -7A, 23mOhm, Single EMH8 |
ON Semiconductor |
| 17 |
ENA1387 |
P-Channel Power MOSFET, -30V, -7.5A, 25mOhm, Single ECH8 |
ON Semiconductor |
| 18 |
ENA1604 |
P-Channel Power MOSFET, -40V, -70A, 10.4mOhm, Single ATPAK |
ON Semiconductor |
| 19 |
ENA1655 |
P-Channel Power MOSFET -75V -100A 8 mOhm TO-263-2L/TO-263 |
ON Semiconductor |
| 20 |
ENA1907 |
PowerMOSFET -60V -78A 6.5mOhm Pch Single TO-220F-3SG |
ON Semiconductor |
| 21 |
ENA1908 |
P-Channel Power MOSFET, -75V, -68A, 8.5mOhm, TO-220F-3SG |
ON Semiconductor |
| 22 |
GES5811 |
Planar passivated epitaxial PNP silicon transistor. -25V, -750mA. |
General Electric Solid State |
| 23 |
GES5813 |
Planar passivated epitaxial PNP silicon transistor. -25V, -750mA. |
General Electric Solid State |
| 24 |
GES5815 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
| 25 |
GES5817 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
| 26 |
GES5819 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
| 27 |
HD44231P |
V(dd): -0.3 to +7V; V(ss): +0.3 to -7V; 0.5W; single chip CODEC with filter (COMBO). |
Hitachi Semiconductor |
| 28 |
HD44232P |
V(dd): -0.3 to +7V; V(ss): +0.3 to -7V; 0.5W; single chip CODEC with filter (COMBO). |
Hitachi Semiconductor |
| 29 |
HD44233P |
V(dd): -0.3 to +7V; V(ss): +0.3 to -7V; 0.5W; single chip CODEC with filter (COMBO). |
Hitachi Semiconductor |
| 30 |
HD44234P |
V(dd): -0.3 to +7V; V(ss): +0.3 to -7V; 0.5W; single chip CODEC with filter (COMBO). |
Hitachi Semiconductor |
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