| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S1921D |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V |
Hitachi Semiconductor |
| 2 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
| 3 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
| 4 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
| 5 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
| 6 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
| 7 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 8 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 9 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
| 10 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
| 11 |
2SAR514P5 |
PNP -80V -0.7A Medium Power Transistor |
ROHM |
| 12 |
2SAR514P5T100 |
PNP -80V -0.7A Medium Power Transistor |
ROHM |
| 13 |
2SAR544P5 |
PNP -80V -2.5A Medium Power Transistor |
ROHM |
| 14 |
2SAR544P5T100 |
PNP -80V -2.5A Medium Power Transistor |
ROHM |
| 15 |
2SAR586D |
PNP -80V -5.0A Medium Power Transistor |
ROHM |
| 16 |
2SAR586DGTL |
PNP -80V -5.0A Medium Power Transistor |
ROHM |
| 17 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 18 |
2SB1204 |
Bipolar Transistor, -50V, -8A, Low VCE(sat), PNP Single TP/TP-FA |
ON Semiconductor |
| 19 |
2SB1344 |
POWER TRANSISTOR (-100V, -8A) |
ROHM |
| 20 |
2SD2025 |
POWER TRANSISTOR (-100V, -8A) |
ROHM |
| 21 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 22 |
BC328 |
Transistor. Switch. and amp. applications. Suitable for AF-driver and power output stages. Vces = -30V, Vceo = -25V, Vebo = -5V. Collector dissipation Pc(max) = 625mW. Ic = -800mA. |
USHA India LTD |
| 23 |
BC556 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -80V, Vceo= -65V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 24 |
BC640 |
Transistor. Switching and amplifier applications. Vcer = -100V, Vces = -100V, Vceo = -80V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 25 |
BD204 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. |
General Electric Solid State |
| 26 |
BD538 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 50W. |
General Electric Solid State |
| 27 |
BD800 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V, 65W. |
General Electric Solid State |
| 28 |
IRF9131 |
-10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs |
Intersil |
| 29 |
IRF9132 |
-10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs |
Intersil |
| 30 |
IRF9133 |
-10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs |
Intersil |
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