No. |
Part Name |
Description |
Manufacturer |
1 |
3D7408G-0.25 |
Delay 0.25 +/-0.15 ns, monolithic 8-BIT pragrammable delay line |
Data Delay Devices Inc |
2 |
3D7408S-0.25 |
Delay 0.25 +/-0.15 ns, monolithic 8-BIT pragrammable delay line |
Data Delay Devices Inc |
3 |
APT4020BN |
POWER MOS V 400V 26.0A 0.20 Ohm / 400V 23.0A 0.25 Ohm |
Advanced Power Technology |
4 |
APT4025BN |
POWER MOS V 400V 26.0A 0.20 Ohm / 400V 23.0A 0.25 Ohm |
Advanced Power Technology |
5 |
APT5025BN |
POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm |
Advanced Power Technology |
6 |
APT5030BN |
POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm |
Advanced Power Technology |
7 |
ATL25 |
The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi |
Atmel |
8 |
BGA7024 |
400 MHz to 2700 MHz 0.25 W high linearity Si amplifier |
NXP Semiconductors |
9 |
BGA7124 |
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier |
NXP Semiconductors |
10 |
MC33385 |
Quad Low-Side Driver - 0.25 Ohm |
Freescale (Motorola) |
11 |
MPX4101 |
INTEGRATED PRESSURE SENSOR 15 to 102 kPa (2.18 to 14.8 psi) 0.25 to 4.95 V Output |
Motorola |
12 |
MPX4101AP |
INTEGRATED PRESSURE SENSOR 15 to 102 kPa (2.18 to 14.8 psi) 0.25 to 4.95 V Output |
Motorola |
13 |
MPX4101AS |
INTEGRATED PRESSURE SENSOR 15 to 102 kPa (2.18 to 14.8 psi) 0.25 to 4.95 V Output |
Motorola |
14 |
MPX4101ASX |
INTEGRATED PRESSURE SENSOR 15 to 102 kPa (2.18 to 14.8 psi) 0.25 to 4.95 V Output |
Motorola |
15 |
MTD9N10E |
TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
Motorola |
16 |
MTP10N10E |
TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
Motorola |
17 |
MTP16N25E |
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM |
Motorola |
18 |
NE552R479A-T1A |
NEC's 3.0 V, 0.25 W, L&S-band medium power silicon LD-MOSFET. |
NEC |
19 |
PBHV9040T |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor |
Nexperia |
20 |
PBHV9040T |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor |
NXP Semiconductors |
21 |
PBHV9040X |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor |
Nexperia |
22 |
PBHV9040X |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor |
NXP Semiconductors |
23 |
PBHV9040Z |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor |
Nexperia |
24 |
PBHV9040Z |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor |
NXP Semiconductors |
25 |
QPA9219 |
1930 - 1995 MHz, 0.25 Watt High Linearity Small Cell Power Amplifier |
Qorvo |
26 |
QPA9226 |
2500 - 2700 MHz, 0.25 Watt High Linearity Small Cell Power Amplifier |
Qorvo |
27 |
QPC6713 |
50 - 6000 MHz Serial Controlled Digital Step Attenuator, 7-Bit, 0.25 dB Steps |
Qorvo |
28 |
RFPA2172 |
ISM Band, 3.6V, 0.25 Watt Amplifier with Analog Gain Control |
Qorvo |
29 |
RFSA3713 |
5 - 6000 MHz Serial Controlled Digital Step Attenuator, 7-Bit, 0.25 dB Steps |
Qorvo |
30 |
RFSA3714 |
50 - 6000 MHz Serial/Parallel Controlled Digital Step Attenuator, 7-Bit, 0.25 dB Steps |
Qorvo |
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