No. |
Part Name |
Description |
Manufacturer |
1 |
1N6513 |
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
2 |
1N6515 |
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
3 |
1N6517 |
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
4 |
1N6519 |
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
5 |
1N6675 |
0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
6 |
1N6676 |
0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
7 |
1N6677 |
0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
8 |
1N6677UR-1 |
0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Microsemi |
9 |
2EZ100 |
100 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
10 |
2EZ110 |
110 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
11 |
2EZ120 |
120 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
12 |
2EZ130 |
130 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
13 |
2EZ140 |
140 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
14 |
2EZ150 |
150 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
15 |
2EZ160 |
160 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
16 |
2EZ170 |
170 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
17 |
2EZ180 |
180 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
18 |
2EZ190 |
190 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
19 |
2EZ200 |
200 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
20 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
21 |
2N5013 |
800 V, 0.5 A high voltage NPN transistor |
Solid State Devices Inc |
22 |
2N5014 |
900 V, 0.5 A high voltage NPN transistor |
Solid State Devices Inc |
23 |
2N5015 |
1000 V, 0.5 A high voltage NPN transistor |
Solid State Devices Inc |
24 |
2N5401HR |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
25 |
2N5401HRG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
26 |
2N5401HRT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
27 |
2N5401RHRG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
28 |
2N5401RHRT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
29 |
2N5401RUBG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
30 |
2N5401RUBT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
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