No. |
Part Name |
Description |
Manufacturer |
1 |
1N2385 |
High-voltage silicon rectifier 10000V |
Motorola |
2 |
1N5184 |
Rectifier Diode 10000V 0.6A |
Motorola |
3 |
ADCH-80 |
RF Choke 50 MHz to 10000 MHz |
Mini-Circuits |
4 |
C1962 |
Channel photomultiplexer, 3/4 inche, window material quartz., dark current 10000 pA. |
PerkinElmer Optoelectronics |
5 |
C1963 |
Channel photomultiplexer, 3/4 inche, window material UV glass., dark current 10000 pA. |
PerkinElmer Optoelectronics |
6 |
CDD1933 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
7 |
CFB949 |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 |
Continental Device India Limited |
8 |
CFB949A |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A |
Continental Device India Limited |
9 |
CFB949AP |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP |
Continental Device India Limited |
10 |
CFB949P |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P |
Continental Device India Limited |
11 |
CFD1275 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 |
Continental Device India Limited |
12 |
CFD1275A |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949A |
Continental Device India Limited |
13 |
CFD1275AP |
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP |
Continental Device India Limited |
14 |
CFD1275P |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949P |
Continental Device India Limited |
15 |
CFD1933 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
16 |
CN1933 |
2.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
17 |
CP1342 |
2.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
18 |
CSB1272 |
10.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
19 |
CSD1638 |
1.200W Low Frequency PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 1000 - 10000 hFE. |
Continental Device India Limited |
20 |
E903 |
Mega bright green, T-1 3/4, GaN LED. Lens clear. Luminous intensity at 20mA: 2500mcd(min), 10000mcd(typ). Forward voltage at 20mA: 3.5V(typ), 4.0V(max). |
Gilway Technical Lamp |
21 |
HFCN-3800 |
Ceramic High Pass Filter 50ohm, 4250 to 10000MHz |
Mini-Circuits |
22 |
HFCN-3800D |
Ceramic High Pass Filter 50ohm, 4250 to 10000MHz |
Mini-Circuits |
23 |
LT10000-S |
Current Transducer LT 10000-S |
LEM |
24 |
MDA1331H |
High Voltage Silicon Rectifier Molded Assemblies 10000V 1A |
Motorola |
25 |
MDA1331HC |
High Voltage Silicon Rectifier Molded Assemblies 10000V 1A common cathode |
Motorola |
26 |
MDA1331HD |
High Voltage Silicon Rectifier Molded Assemblies 10000V 1A Voltage Doubler |
Motorola |
27 |
MDA1331HU |
High Voltage Silicon Rectifier Molded Assemblies 10000V 1A common anode |
Motorola |
28 |
MDA1333H |
High Voltage Silicon Rectifier Molded Assemblies 10000V 2.5A |
Motorola |
29 |
MDA1333HR |
High Voltage Silicon Rectifier Molded Assemblies 10000V 2.5A reverse polarity |
Motorola |
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