No. |
Part Name |
Description |
Manufacturer |
1 |
13PD100-F |
The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. |
Anadigics Inc |
2 |
1N3282 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 700V |
Motorola |
3 |
1N3283 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1050V |
Motorola |
4 |
1N3284 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1400V |
Motorola |
5 |
1N3285 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1750V |
Motorola |
6 |
1N3286 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 2100V |
Motorola |
7 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
8 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
9 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
10 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
11 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
12 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
13 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
14 |
2N3390 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
15 |
2N3391 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
16 |
2N3391A |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
17 |
2N3392 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
18 |
2N3393 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
19 |
2N3394 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
20 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
21 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
22 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
23 |
2N5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
24 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
25 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
26 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
27 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
28 |
2N5583 |
PNP silicon high frequency transistor 1.3GHz - 100mAdc |
Motorola |
29 |
2N5837 |
NPN silicon high frequency transistor 1.7GHz - 100mAdc |
Motorola |
30 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
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