No. |
Part Name |
Description |
Manufacturer |
1 |
1N3282 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 700V |
Motorola |
2 |
1N3283 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1050V |
Motorola |
3 |
1N3284 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1400V |
Motorola |
4 |
1N3285 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1750V |
Motorola |
5 |
1N3286 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 2100V |
Motorola |
6 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
7 |
2N3390 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
8 |
2N3391 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
9 |
2N3391A |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
10 |
2N3392 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
11 |
2N3393 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
12 |
2N3394 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
13 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
14 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
15 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
16 |
2N5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
17 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
18 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
19 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
20 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
21 |
2N5583 |
PNP silicon high frequency transistor 1.3GHz - 100mAdc |
Motorola |
22 |
2N5837 |
NPN silicon high frequency transistor 1.7GHz - 100mAdc |
Motorola |
23 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
24 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
25 |
2SC3245A |
900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A |
Isahaya Electronics Corporation |
26 |
2SC4630LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
27 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
28 |
2SCR341Q |
NPN 100mA 400V Middle Power Transistor |
ROHM |
29 |
2SCR341QTR |
NPN 100mA 400V Middle Power Transistor |
ROHM |
30 |
2SCR346P |
NPN 100mA 400V Middle Power Transistor |
ROHM |
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