No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE120CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 102.00 V. Test current IT = 1 mA. |
Bytes |
2 |
1015MP |
15 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
3 |
1035MP |
35 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
4 |
1075MP |
75 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
5 |
1090MP |
90 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
6 |
1681A |
1681A Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 102 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
7 |
1681AD |
1681AD Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 102 Channels, 4M Memory |
Agilent (Hewlett-Packard) |
8 |
1691A |
1691A PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 102 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
9 |
1691AD |
1691AD PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 102 Channels, 4M Memory |
Agilent (Hewlett-Packard) |
10 |
1N5659A |
Diode TVS Single Uni-Dir 102V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
11 |
1N6297A |
Diode TVS Single Uni-Dir 102V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
12 |
28F008BE-T/B |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
13 |
28F008BV-T/B |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
14 |
28F0101024K |
28F010 1024K (128K X 8) CMOS FLASH MEMORY |
Intel |
15 |
28F800BV-B |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
16 |
28F800BV-T |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
17 |
28F800CE-T/B |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
18 |
28F800CV-T/B |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
19 |
30KPA102 |
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
20 |
30KPA102A |
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
21 |
30KPA102C |
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
22 |
30KPA102CA |
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
23 |
63RS881 |
High Performance 1024 x 8 Registered PROM |
Advanced Micro Devices |
24 |
63RS881 |
High Performance 1024 x 8 Registered PROM |
Monolithic Memories |
25 |
85C82 |
256 to 1024 x 8-bit CMOS EEPROMs with I2C-bus interface |
Philips |
26 |
93L415ADC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
27 |
93L415APC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
28 |
93L425ADC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
29 |
93L425APC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
30 |
AD5174 |
Single-Channel, 1024-Position, Digital Rheostat with SPI interface and 50-TP Memory |
Analog Devices |
| | | |