| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE110CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 106.0 V(min), 116 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
AK4355 |
6-channel 24-bit 192K 106dB Digital volume (DATT) |
AKM |
| 3 |
AK4384 |
192KHz 106dB DAC, single-ended outputs |
AKM |
| 4 |
AK5381 |
Low-cost 96KHz ADC 106dB w/defeatable HPF |
AKM |
| 5 |
APT20M20JFLL |
POWER MOS 7 200V 106A 0.020 Ohm |
Advanced Power Technology |
| 6 |
APT20M20JLL |
POWER MOS 7 200V 106A 0.020 Ohm |
Advanced Power Technology |
| 7 |
BZV48C100 |
94 to 106V; P(tot): 5W; zener diode |
SGS Thomson Microelectronics |
| 8 |
CZRM27C100PA |
0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 1%. |
Comchip Technology |
| 9 |
CZRM27C100PB |
0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 2%. |
Comchip Technology |
| 10 |
CZRM27C100PC |
0.8W surface mount zener diode. Vzmin 94 V, Vzmax 106 V, 5%. |
Comchip Technology |
| 11 |
HFBR-5910E |
HFBR-5910E · 1063 Mbit/s MMF (500m) Small Form Factor (SFF) Transceiver for Fibre Channel/Storage Applications |
Agilent (Hewlett-Packard) |
| 12 |
HFCN-880 |
Ceramic High Pass Filter 1060 to 3200 MHz |
Mini-Circuits |
| 13 |
HFCN-880D |
Ceramic High Pass Filter 1060 to 3200 MHz |
Mini-Circuits |
| 14 |
HFCT-5910E |
HFCT-5910E · 1063 Mbit/s SMF (10km) Small Form Factor (SFF)Transceiver for Fibre Channel/Storage Applications |
Agilent (Hewlett-Packard) |
| 15 |
IRF6616 |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 16 |
IRF6616TR1 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 17 |
IRF6616TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 18 |
K4R521669A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
| 19 |
K4R761869A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
| 20 |
MAX3610 |
Low-Jitter 106.25MHz/212.5MHz Fibre-Channel Clock Generator |
MAXIM - Dallas Semiconductor |
| 21 |
MAX3610AU_D |
+3.3 V, low-jitter 106.25/212.5 MHz fibre-channel clock generator |
MAXIM - Dallas Semiconductor |
| 22 |
MAX3610BU_D |
+3.3 V, low-jitter 106.25/212.5 MHz fibre-channel clock generator |
MAXIM - Dallas Semiconductor |
| 23 |
MAX4074BFESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 25V/V, noninverting gain 26V/V, -3dB BW 106kHZ. |
MAXIM - Dallas Semiconductor |
| 24 |
MAX4074BFEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 25V/V, noniverting gain 26V/V, -3dB BW 106kHZ. |
MAXIM - Dallas Semiconductor |
| 25 |
MAX4075BFESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 25V/V, noninverting gain 26V/V, -3dB BW 106kHz. |
MAXIM - Dallas Semiconductor |
| 26 |
MAX4075BFEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 25V/V, noninverting gain 26V/V, -3dB BW 106kHZ. |
MAXIM - Dallas Semiconductor |
| 27 |
MP110B |
25 Ampere PNP ADE Germanium Power Switching Transistor 90V, 106W |
Motorola |
| 28 |
NBXDBA012 |
3.3V, 106.25MHz / 212.5MHz PureEdge™ FibreChannel Clock Oscillator Module |
ON Semiconductor |
| 29 |
NBXDPA012 |
Crystal Oscillator Module, 2.5 V / 3.3 V, 106.25 MHz / 212.50 MHz PureEdge™ LVPECL |
ON Semiconductor |
| 30 |
NTMFS4983NF |
Power MOSFET, 30 V, 106 A, Single N-Channel |
ON Semiconductor |
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