| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AUIRF7736M2TR |
A 40V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 108 amperes optimized with low on resistance |
International Rectifier |
| 2 |
CD9011G |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 72 - 108 hFE |
Continental Device India Limited |
| 3 |
CD9018G |
0.400W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.030A Ic, 72 - 108 hFE |
Continental Device India Limited |
| 4 |
P4KE120C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 108 V, Vbr(max) = 132 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 5 |
PSMN8R5-108ES |
N-channel 108 V 8.5 mΩ standard level MOSFET in I2PAK |
NXP Semiconductors |
| 6 |
STEVAL-TDR009V1 |
650 W / 88 - 108 MHz reference design using 2x SD2932 |
ST Microelectronics |
| 7 |
STEVAL-TDR028V1 |
350 W - 48 V demoboard using 1x STAC2942B for FM broadcast application (VHF amplifier 87.5 - 108 MHz) |
ST Microelectronics |
| 8 |
STEVAL-TDR029V1 |
700 W - 48 V demoboard using 2x STAC2942B for FM broadcast application (VHF amplifier 87.5 - 108 MHz) |
ST Microelectronics |
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