No. |
Part Name |
Description |
Manufacturer |
1 |
1N77A |
Photosensitive Device; VF=10V 10mA, IR(dark)=30uA 50V |
Motorola |
2 |
1N77B |
Photosensitive Device; VF=10V 10mA, IR(dark)=30uA 50V |
Motorola |
3 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
4 |
2N3824 |
Trans JFET N-CH 50V 10mA Si 4-Pin TO-72 |
New Jersey Semiconductor |
5 |
2N3959 |
NPN silicon high frequency transistor 1.8GHz - 10mAdc |
Motorola |
6 |
2N3960 |
NPN silicon high frequency transistor 1.8GHz - 10mAdc |
Motorola |
7 |
2N5018 |
TRANS JFET P-CH 10MA 3TO-18 |
New Jersey Semiconductor |
8 |
2N5835 |
NPN silicon high frequency transistor 2.5GHz - 10mAdc |
Motorola |
9 |
2N6304 |
NPN silicon high frequency transistor 1.4GHz - 10mAdc |
Motorola |
10 |
2N6305 |
NPN silicon high frequency transistor 1.2GHz - 10mAdc |
Motorola |
11 |
2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
12 |
2SC4634LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
13 |
2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
14 |
2SC4710LS |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
15 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
16 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
17 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
18 |
2SK596A |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
19 |
2SK596B |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
20 |
2SK596C |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
21 |
2SK596D |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
22 |
2SK596E |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
23 |
2U3836E18QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
24 |
2U3836J25QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
25 |
2U3836K33QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
26 |
2U3836L30QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
27 |
2U3837L30QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
28 |
2U3838E18QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
29 |
2U3838J25QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
30 |
2U3838K33QDBVRG4Q1 |
Automotive Catalog 220nA Supervisor with 10ms/200ms Selectable Delay Time 5-SOT-23 -40 to 125 |
Texas Instruments |
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