No. |
Part Name |
Description |
Manufacturer |
1 |
1N3580 |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
2 |
1N3580A |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
3 |
1N3580B |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
4 |
1N3581 |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
5 |
1N3581A |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
6 |
1N3581B |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
7 |
1N3582 |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
8 |
1N3582A |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
9 |
1N3582B |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
10 |
1N3583 |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
11 |
1N3583A |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
12 |
1N3583B |
Temperature-Compesated Zener Refference Diode 11.7V ±5.0% |
Motorola |
13 |
1N4741 |
11.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
14 |
1N4741 |
1 W silicon zener diode. Nominal zener voltage 11.0 V. |
Fairchild Semiconductor |
15 |
1N4741A |
11.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
16 |
1N5141A |
Diode VAR Cap Single 60V 11.4pF 2-Pin DO-7 |
New Jersey Semiconductor |
17 |
1N5241 |
500 mW silicon zener diode. Nominal zener voltage 11.0 V. |
Fairchild Semiconductor |
18 |
1N5241B |
11.0V 500 mW Zener Diode |
Continental Device India Limited |
19 |
1N5531A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
20 |
1N5531B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
21 |
1N5636A |
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
22 |
1N5937 |
1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
23 |
1N5937A |
1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
24 |
1N5937C |
1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
25 |
1N5937D |
1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
26 |
1N6110 |
Diode TVS Single Bi-Dir 11.4V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
27 |
1N6110A |
Diode TVS Single Bi-Dir 11.4V 500W 2-Pin |
New Jersey Semiconductor |
28 |
1N6146 |
Diode TVS Single Bi-Dir 11.4V 1.5KW 2-Pin |
New Jersey Semiconductor |
29 |
1N6146A |
Diode TVS Single Bi-Dir 11.4V 1.5KW 2-Pin |
New Jersey Semiconductor |
30 |
1N6274A |
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
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