| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6111 |
Diode TVS Single Bi-Dir 12.2V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 2 |
1N6111A |
Diode TVS Single Bi-Dir 12.2V 500W 2-Pin |
New Jersey Semiconductor |
| 3 |
1N6147 |
Diode TVS Single Bi-Dir 12.2V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 4 |
1N6147A |
Diode TVS Single Bi-Dir 12.2V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 5 |
EXO-3-12.288M |
Crystal oscillator for uPs with programmable output, 12.288MHz |
Wolfgang Knap |
| 6 |
NB3N3010B |
3.3V, 12.288 MHz Audio Oversampling Clock Generator for USB Applications |
ON Semiconductor |
| 7 |
STE250N06 |
Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV |
SGS Thomson Microelectronics |
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