| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N458 |
Low leakage diode. Working inverse voltage 125V. |
Fairchild Semiconductor |
| 2 |
1N458 |
Diode Switching 125V 0.165A 2-Pin DO-7 |
New Jersey Semiconductor |
| 3 |
1N464A |
Diode 125V 0.4A 2-Pin DO-7 |
New Jersey Semiconductor |
| 4 |
1N484A |
Diode 125V 0.65A 2-Pin DO-35 |
New Jersey Semiconductor |
| 5 |
1N484B |
Diode 125V 0.65A 2-Pin DO-35 |
New Jersey Semiconductor |
| 6 |
1N5815 |
20A, 125V ultra fast recovery rectifier |
MCC |
| 7 |
1N5815 |
Diode Switching 125V 20A 2-Pin DO-4 |
New Jersey Semiconductor |
| 8 |
1N61 |
Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
| 9 |
1N63 |
Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
| 10 |
1N64 |
Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
| 11 |
2N5050 |
Trans GP BJT NPN 125V 2A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 12 |
2N6395 |
12A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
| 13 |
2N6401 |
16A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
| 14 |
ARF1500 |
RF POWER MOSFET 125V 900W 40MHz |
Advanced Power Technology |
| 15 |
ARF463A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 125V 100W 100MHz |
Advanced Power Technology |
| 16 |
ARF463B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 125V 100W 100MHz |
Advanced Power Technology |
| 17 |
BAY72 |
Diode Small Signal Switching 125V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
| 18 |
BCX23 |
Trans GP BJT PNP 125V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 19 |
BDY58 |
Trans GP BJT NPN 125V 25A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 20 |
BLF177 |
Trans RF MOSFET N-CH 125V 16A 4-Pin CRFM |
New Jersey Semiconductor |
| 21 |
BLF278 |
Trans RF MOSFET N-CH 125V 18A 5-Pin CDFM |
New Jersey Semiconductor |
| 22 |
BUV10N |
25A NPN silicon power metal transistor 125V 175W |
Motorola |
| 23 |
BUV20 |
Trans GP BJT NPN 125V 50A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 24 |
BUV20 |
Power 50A 125V NPN TO204 |
ON Semiconductor |
| 25 |
BUX10 |
Trans GP BJT NPN 125V 25A 3-Pin(2+Tab) TO-3 Bag |
New Jersey Semiconductor |
| 26 |
BUX40 |
20A NPN silicon power metal transistor 125V 120W SWITCHMODE series |
Motorola |
| 27 |
BUY55 |
Trans GP BJT NPN 125V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 28 |
CP754 |
0.900W General Purpose PNP Plastic Leaded Transistor. 125V Vceo, 1.000A Ic, 50 - hFE |
Continental Device India Limited |
| 29 |
FDH300 |
Diode 125V 0.2A 2-Pin DO-35 T/R |
New Jersey Semiconductor |
| 30 |
FDLL458 |
Low leakage diode. Working inverse voltage 125V. |
Fairchild Semiconductor |
| | | |
