No. |
Part Name |
Description |
Manufacturer |
1 |
0662004.HXLL |
LT-5 tm fast-acting fuse. Long lead (bulk) 100 pieces. Ampere rating 4.00, voltage rating 250, nominal resistance cold ohms 13. |
Littelfuse |
2 |
0662004.HXSL |
LT-5 tm fast-acting fuse. Short lead (bulk) 100 pieces. Ampere rating 4.00, voltage rating 250, nominal resistance cold ohms 13. |
Littelfuse |
3 |
0662004.ZRLL |
LT-5 tm fast-acting fuse. Long lead (tape and reel) 750 pieces. Ampere rating 4.00, voltage rating 250, nominal resistance cold ohms 13. |
Littelfuse |
4 |
1N4743 |
13.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
5 |
1N4743 |
1 W silicon zener diode. Nominal zener voltage 13.0 V. |
Fairchild Semiconductor |
6 |
1N4743A |
13.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
7 |
1N5142 |
Diode VAR Cap Single 60V 13.5pF 2-Pin DO-7 |
New Jersey Semiconductor |
8 |
1N5243 |
500 mW silicon zener diode. Nominal zener voltage 13.0 V. |
Fairchild Semiconductor |
9 |
1N5243B |
13.0V 500 mW Zener Diode |
Continental Device India Limited |
10 |
1N5533A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
11 |
1N5533B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
12 |
1N5638A |
Diode TVS Single Uni-Dir 13.6V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
13 |
1N5935 |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
14 |
1N5935A |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
15 |
1N5935C |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
16 |
1N5935D |
1.5 W, silicon zener diode. Zener voltage 27V. Test current 13.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
17 |
1N6112 |
Diode TVS Single Bi-Dir 13.7V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
18 |
1N6112A |
Diode TVS Single Bi-Dir 13.7V 500W 2-Pin |
New Jersey Semiconductor |
19 |
1N6148 |
Diode TVS Single Bi-Dir 13.7V 1.5KW 2-Pin |
New Jersey Semiconductor |
20 |
1N6148A |
Diode TVS Single Bi-Dir 13.7V 1.5KW 2-Pin |
New Jersey Semiconductor |
21 |
1N6276A |
Diode TVS Single Uni-Dir 13.6V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
22 |
1N6276CA |
Diode TVS Single Bi-Dir 13.6V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
23 |
1N964 |
13.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
24 |
1N964 |
500 mW silicon planar zener diode. Max zener voltage 13.0 V. |
Fairchild Semiconductor |
25 |
1N964A |
13.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
26 |
1N964B |
13.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
27 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
28 |
2N3926 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
29 |
2N3927 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
30 |
2N5591 |
NPN silicon RF power transistor designed for VHF and 13.6V |
Motorola |
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