| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE150C |
Transient voltage suppressor. 1500 W. Breakdown voltage 136.0 V(min), 165.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1.5KE160CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 136.00 V. Test current IT = 1 mA. |
Bytes |
| 3 |
1670G |
1670G Standalone Logic Analyzer with 500 MHz Timing/150 MHz State, 136 Channels, 128K Memory |
Agilent (Hewlett-Packard) |
| 4 |
1680A |
1680A Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 136 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 5 |
1680AD |
1680AD Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 136 Channels, 4M Memory |
Agilent (Hewlett-Packard) |
| 6 |
1690A |
1690A PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 136 Channels, 1M Memory |
Agilent (Hewlett-Packard) |
| 7 |
1690AD |
1690AD PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 136 Channels, 4M Memory |
Agilent (Hewlett-Packard) |
| 8 |
1N5662A |
Diode TVS Single Uni-Dir 136V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 9 |
1N6136 |
Diode TVS Single Bi-Dir 136.8V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 10 |
1N6136A |
Diode TVS Single Bi-Dir 136.8V 500W 2-Pin |
New Jersey Semiconductor |
| 11 |
1N6172 |
Diode TVS Single Bi-Dir 136.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12 |
1N6172A |
Diode TVS Single Bi-Dir 136.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 13 |
1N6300A |
Diode TVS Single Uni-Dir 136V 1.5KW 2-Pin DO-201 Reel |
New Jersey Semiconductor |
| 14 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 15 |
2SB1000 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366 |
Hitachi Semiconductor |
| 16 |
2SB1000A |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366A |
Hitachi Semiconductor |
| 17 |
40290 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 18 |
40291 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 19 |
40292 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 20 |
5KP100 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 21 |
5KP100C |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 22 |
AN-3749 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
| 23 |
AT91FR40161 |
The AT91FR40161 features 136 K bytes of on-chip SRAM, 2M bytes of Flash, an External Bus Interface, a 3-channel Timer/Counter, 2 USARTs, a Watchdog Timer and advanced power-saving features.The AT91x40 Series does not feature boundary-scan |
Atmel |
| 24 |
AT91R40807 |
The AT91R40807 features 136K bytes of on-chip SRAM, an External Bus Interface, a 3-channel Timer/Counter, 2 USARTs, a Watchdog Timer and advanced power-saving features. |
Atmel |
| 25 |
BZW06-136B |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 136V |
Fagor |
| 26 |
ENA1993 |
Power MOSFET, 20V, 2A, 136mOhm, -20V, -1.5A, 266mOhm, Complementary Dual MCPH6 |
ON Semiconductor |
| 27 |
IRF6612TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes. |
International Rectifier |
| 28 |
KM7101 |
Ultra-Low Cost, 136uA, 4.9MHz Rail-to-Rail I/O Amplifier |
Fairchild Semiconductor |
| 29 |
LPC1810FBD144 |
0kB flash, 136kB SRAM, no USB, LQFP144 package |
NXP Semiconductors |
| 30 |
LPC1810FET100 |
0kB flash, 136kB SRAM, no USB, TFBGA100 package |
NXP Semiconductors |
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