| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE170C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA. |
Bytes |
| 2 |
1N5663 |
Diode TVS Single Uni-Dir 138V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 3 |
1N6301 |
Diode TVS Single Uni-Dir 138V 1.5KW 2-Pin Case 1.5KE |
New Jersey Semiconductor |
| 4 |
2722 162 02902 |
VHF Narrow-BAND Circulators/Isolators, frequency range 138 to 141 MHz |
Philips |
| 5 |
2722 162 05001 |
VHF Narrow-BAND Circulators/Isolators, frequency range 138 to 141 MHz |
Philips |
| 6 |
BZW06-136 |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 138V |
Fagor |
| 7 |
CZRM27C150PA |
0.8W surface mount zener diode. Vzmin 138 V, Vzmax 156 V, 1%. |
Comchip Technology |
| 8 |
CZRM27C150PB |
0.8W surface mount zener diode. Vzmin 138 V, Vzmax 156 V, 2%. |
Comchip Technology |
| 9 |
CZRM27C150PC |
0.8W surface mount zener diode. Vzmin 138 V, Vzmax 156 V, 5%. |
Comchip Technology |
| 10 |
GS81032A2T-138 |
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 11 |
GS81032AQ-138 |
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 12 |
GS81032AQ-138I |
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 13 |
GS81032AT-138I |
9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 14 |
M089 |
Technical Note 138 - Characterization of audio parameters of the M089 |
SGS-ATES |
| 15 |
MODELS 132, 138, 139 |
33,3mm Industrial Grade, Single-turn |
Vishay |
| 16 |
P4KE170-T3 |
Reverse stand-off voltage: 138.00V transient voltage suppressor |
Won-Top Electronics |
| 17 |
P4KE170-TB |
Reverse stand-off voltage: 138.00V transient voltage suppressor |
Won-Top Electronics |
| 18 |
P4KE170C |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA. |
Bytes |
| 19 |
P4KE170C-T3 |
Reverse stand-off voltage: 138.00V transient voltage suppressor |
Won-Top Electronics |
| 20 |
P4KE170C-TB |
Reverse stand-off voltage: 138.00V transient voltage suppressor |
Won-Top Electronics |
| 21 |
P6KE170 |
Diode TVS Single Uni-Dir 138V 600W Automotive 2-Pin DO-15 |
New Jersey Semiconductor |
| 22 |
P6KE170-T3 |
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 23 |
P6KE170-TB |
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 24 |
P6KE170C |
600 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 138.00 V. Test current IT = 1 mA. |
Bytes |
| 25 |
P6KE170C |
Diode TVS Single Bi-Dir 138V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 26 |
P6KE170C-T3 |
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 27 |
P6KE170C-TB |
Reverse stand-off voltage: 138.00V, 600W transient voltage suppressor |
Won-Top Electronics |
| 28 |
STY145N65M5 |
N-channel 650 V, 0.012 Ohm typ., 138 A, MDmesh(TM) V Power MOSFET in Max247 package |
ST Microelectronics |
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