| No. |
Part Name |
Description |
Manufacturer |
| 1 |
11691D |
11691D Coaxial Directional Coupler, 2 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 2 |
11692D |
11692D Coaxial Dual-Directional Coupler, 2 GHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 3 |
1457 |
Bulk Metal Foil Technology, 18 Pin Dual-In-Line Hermetic Resistor Network |
Vishay |
| 4 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
| 5 |
1N4746 |
1 WATT, 18 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 6 |
1N4746A |
Voltage regulator diode. Working voltage (nom) 18 V . |
Philips |
| 7 |
1N5248 |
500mW, 18 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 8 |
1N5248AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 18 V. Tolerance +-10%. |
Microsemi |
| 9 |
1N5248BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 18 V. Tolerance +-5%. |
Microsemi |
| 10 |
1N5248UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 18 V. |
Microsemi |
| 11 |
1N967 |
400mW, 18 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 12 |
1SMB5931A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 18 V. +-10% tolerance. |
Motorola |
| 13 |
1SMB5931B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 18 V. +-5% tolerance. |
Motorola |
| 14 |
1V010 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
| 15 |
2V010 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
| 16 |
5962-9470401QXA |
512 x 18 x 2 Synchronous Bidirectional FIFO Memory |
Texas Instruments |
| 17 |
5962-9562701NXD |
1024 x 18 Synchronous FIFO Memory |
Texas Instruments |
| 18 |
5962-9650901QXA |
512 x 18 x 2 bidirectional asynchronous FIFO memory |
Texas Instruments |
| 19 |
5962R-0323501QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 20 |
5962R-0323501QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 21 |
5962R-0323501QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 22 |
5962R-0323501VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 23 |
5962R-0323501VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 24 |
5962R-0323501VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 25 |
5962R-0323502QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 26 |
5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 27 |
5962R-0323502QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 28 |
5962R-0323502VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 29 |
5962R-0323502VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 30 |
5962R-0323502VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
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