| No. |
Part Name |
Description |
Manufacturer |
| 1 |
5962-9562701NXD |
1024 x 18 Synchronous FIFO Memory |
Texas Instruments |
| 2 |
5962R-0323501QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 3 |
5962R-0323501QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 4 |
5962R-0323501QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 5 |
5962R-0323501VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 6 |
5962R-0323501VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 7 |
5962R-0323501VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 8 |
5962R-0323502QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 9 |
5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 10 |
5962R-0323502QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 11 |
5962R-0323502VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 12 |
5962R-0323502VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 13 |
5962R-0323502VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 14 |
AS5SS256K18 |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
Austin Semiconductor |
| 15 |
AS5SS256K18DQ-10_IT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 16 |
AS5SS256K18DQ-10_XT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 17 |
AS5SS256K18DQ-8_IT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 18 |
AS5SS256K18DQ-8_XT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 19 |
AS5SS256K18DQ-9_IT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 20 |
AS5SS256K18DQ-9_XT |
256K x 18 SSRAM - synchronous burst SRAM, flow-thru |
Austin Semiconductor |
| 21 |
BAL99LT1 |
CASE 318-08, STYLE 18 SOT-23 (TO-236AB) |
Motorola |
| 22 |
CY7C0430V |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 23 |
CY7C0430V-100BGC |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 24 |
CY7C0430V-100BGI |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 25 |
CY7C0430V-133BGC |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 26 |
CY7C0430V-133BGI |
3.3V 64K x 18 Synchronous QuadPort Static RAM |
Cypress |
| 27 |
CY7C0830V |
FLEx18TM 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM |
Cypress |
| 28 |
CY7C0831AV-133AXI |
FLEx18� 3.3 V 128 K / 256 K / 512 K � 18 Synchronous Dual-Port RAM |
Cypress |
| 29 |
CY7C0831V |
FLEx18TM 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM |
Cypress |
| 30 |
CY7C0832AV-133AXI |
FLEx18� 3.3 V 128 K / 256 K / 512 K � 18 Synchronous Dual-Port RAM |
Cypress |
| | | |
