| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5249 |
500mW, 19 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 2 |
1N5249AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 19 V. Tolerance +-10%. |
Microsemi |
| 3 |
1N5249BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 19 V. Tolerance +-5%. |
Microsemi |
| 4 |
1N5249UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 19 V. |
Microsemi |
| 5 |
24 |
Marking for NE85619 part number, 19 NEC package |
NEC |
| 6 |
34 |
Marking for NE68119 part number, 19 NEC package |
NEC |
| 7 |
82 |
Marking for NE68019 part number, 19 NEC package |
NEC |
| 8 |
83 |
Marking for NE68519 part number, 19 NEC package |
NEC |
| 9 |
ADA4627-1 |
36 V, 19 MHz, Low Noise, Low Bias Current, JFET Op Amp |
Analog Devices |
| 10 |
BUK7K18-40E |
Dual N-channel 40 V, 19 mΩ standard level MOSFET |
Nexperia |
| 11 |
BUK7K18-40E |
Dual N-channel 40 V, 19 mΩ standard level MOSFET |
NXP Semiconductors |
| 12 |
BUK7M19-60E |
N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
| 13 |
BUK7Y19-100E |
N-channel 100 V, 19 mΩ standard level MOSFET in LFPAK56 |
Nexperia |
| 14 |
BUK7Y19-100E |
N-channel 100 V, 19 mΩ standard level MOSFET in LFPAK56 |
NXP Semiconductors |
| 15 |
BUK9M19-60E |
N-channel 60 V, 19 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 16 |
BUK9Y19-100E |
N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 |
Nexperia |
| 17 |
BUK9Y19-100E |
N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 |
NXP Semiconductors |
| 18 |
CD13005B |
60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 15 - 19 hFE |
Continental Device India Limited |
| 19 |
CZRA3019 |
3.0 watt surface mount zener diode. Nom zener voltage 19 V. |
Comchip Technology |
| 20 |
CZRC5356B |
5.0 watt surface mount zener diode. Nom zener voltage 19 V. Tolerance +-5 %. |
Comchip Technology |
| 21 |
HMC448 |
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 19 - 25 GHz OUTPUT |
Hittite Microwave Corporation |
| 22 |
IRF6655TR1PBF |
A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes. |
International Rectifier |
| 23 |
IRF6665TR1 |
Leaded Digital Audio 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes |
International Rectifier |
| 24 |
IRF6665TR1PBF |
A Digital Audio 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes. |
International Rectifier |
| 25 |
IRF6665TRPBF |
A Digital Audio 100V Single N-Channel HEXFET Power MOSFET in a DirectFET SH package rated at 19 amperes. |
International Rectifier |
| 26 |
IRF6711S |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 27 |
IRF6711STR1PBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 28 |
IRF6711STRPBF |
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 29 |
IRF6785 |
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
| 30 |
IRF6785MTRPBF |
A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. |
International Rectifier |
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