| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ200A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 190V(min), 210V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5KE200A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 190V(min), 210V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5KE200A |
Transient voltage suppressor. 1500 W. Breakdown voltage 190.0 V(min), 210.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 4 |
1.5KE200CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 190.0 V(min), 210.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 5 |
15KP190 |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 6 |
15KP190A |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
| 7 |
15KP190C |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 8 |
15KP190CA |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
| 9 |
1N5103 |
Zener Diode 190V 1W |
Motorola |
| 10 |
1N5103 |
Diode Zener Single 190V 5% 3W 2-Pin Case A |
New Jersey Semiconductor |
| 11 |
1N5128 |
Zener Diode 190V 3W |
Motorola |
| 12 |
1N5280 |
Zener Diode 190V |
Motorola |
| 13 |
1N5280 |
Diode Zener Single 190V 20% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 14 |
1N5280A |
Zener Diode 190V |
Motorola |
| 15 |
1N5280A |
Diode Zener Single 190V 10% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 16 |
1N5280AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 190 V. Tolerance +-10%. |
Microsemi |
| 17 |
1N5280B |
Zener Diode 190V |
Motorola |
| 18 |
1N5280B |
500 milliwatts glass silicon zener diode, zener voltage 190V |
Motorola |
| 19 |
1N5280B |
Diode Zener Single 190V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 20 |
1N5280BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 190 V. Tolerance +-5%. |
Microsemi |
| 21 |
1N5280C |
Diode Zener Single 190V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 22 |
1N5280D |
Diode Zener Single 190V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 23 |
1N5280UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 190 V. |
Microsemi |
| 24 |
1N5387 |
Zener Diode 190V 5W |
Motorola |
| 25 |
1N5387 |
Diode Zener Single 190V 20% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 26 |
1N5387A |
Zener Diode 190V 5W |
Motorola |
| 27 |
1N5387A |
Diode Zener Single 190V 10% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
| 28 |
1N5387B |
Zener Diode 190V 5W |
Motorola |
| 29 |
1N5387B |
Diode Zener Single 190V 5% 5W 2-Pin DO-201AE |
New Jersey Semiconductor |
| 30 |
1N5387C |
Diode Zener Single 190V 2% 5W 2-Pin Case T-18 |
New Jersey Semiconductor |
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