No. |
Part Name |
Description |
Manufacturer |
1 |
AD7722 |
CMOS, 16-Bit, 195 kSPS Sigma-Delta ADC |
Analog Devices |
2 |
AD7722AS |
16-Bit, 195 kSPS CMOS, Sigma-Delta ADC |
Analog Devices |
3 |
ADF4360-3 |
Integrated Integer-N Synthesizer and VCO - Output Frequency 1600 to 1950 |
Analog Devices |
4 |
ADF4360-3BCP |
Integrated Integer-N Synthesizer and VCO - Output Frequency 1600 to 1950 |
Analog Devices |
5 |
ADF4360-3BCPRL |
Integrated Integer-N Synthesizer and VCO - Output Frequency 1600 to 1950 |
Analog Devices |
6 |
ADF4360-3BCPRL7 |
Integrated Integer-N Synthesizer and VCO - Output Frequency 1600 to 1950 |
Analog Devices |
7 |
ADF4360-3BCPZ |
Integrated Integer-N Synthesizer and VCO - Output Frequency 1600 to 1950 |
Analog Devices |
8 |
ADF4360-3BCPZRL |
Integrated Integer-N Synthesizer and VCO - Output Frequency 1600 to 1950 |
Analog Devices |
9 |
ADF4360-3BCPZRL7 |
Integrated Integer-N Synthesizer and VCO - Output Frequency 1600 to 1950 |
Analog Devices |
10 |
E2502H50 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1537.40 nm. Frequency 195.0 THz. |
Agere Systems |
11 |
E2502H51 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1536.61 nm. Frequency 195.1 THz. |
Agere Systems |
12 |
E2502H52 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1535.82 nm. Frequency 195.2 THz. |
Agere Systems |
13 |
E2502H53 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1535.04 nm. Frequency 195.3 THz. |
Agere Systems |
14 |
E2502H54 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1534.25 nm. Frequency 195.4 THz. |
Agere Systems |
15 |
E2502H55 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1533.46 nm. Frequency 195.5 THz. |
Agere Systems |
16 |
E2502H56 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1532.68 nm. Frequency 195.6 THz. |
Agere Systems |
17 |
E2502H57 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1531.90 nm. Frequency 195.7 THz. |
Agere Systems |
18 |
E2502H58 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1531.15 nm. Frequency 195.8 THz. |
Agere Systems |
19 |
E2502H59 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1530.37 nm. Frequency 195.9 THz. |
Agere Systems |
20 |
EVAL-ADF4360-3EB1 |
Integrated Integer-N Synthesizer and VCO - Output Frequency 1600 to 1950 |
Analog Devices |
21 |
FDP030N06B_F102 |
N-Channel PowerTrench� MOSFET 60V, 195A, 3.1m? |
Fairchild Semiconductor |
22 |
HFCN-1600 |
Ceramic High Pass Filter 1950 to 5000 MHz |
Mini-Circuits |
23 |
HFCN-1600D |
Ceramic High Pass Filter 1950 to 5000 MHz |
Mini-Circuits |
24 |
NGA-186 |
DC-6000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. 12.0dB gain, 14.7 dBmP1dB at 1950MHz. |
Stanford Microdevices |
25 |
NGA-286 |
DC-6000 MHz, cascadable 50 ohm (1.3:1 VSWR) GaAs HBT MMIC amplifier. High gain: 14.8 at 1950MHz. |
Stanford Microdevices |
26 |
NGA-386 |
DC-5000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz. |
Stanford Microdevices |
27 |
NGA-489 |
0.5-10 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 14.5 dB at 1950MHz. |
Stanford Microdevices |
28 |
NGA-589 |
DC-5.5 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 19.2 dB at 1950MHz. |
Stanford Microdevices |
29 |
NGA-686 |
DC-6000 MHz, cascadable 50 ohm GaAs HBT MMIC amplifier. 11.4dB gain, 19.2 dBm P1dB at 1950MHz. |
Stanford Microdevices |
30 |
NGA-689 |
DC-5000 MHz, cascadable 50 ohm(1.4:1 VSRM) GaAs HBT MMIC amplifier. 11.7dB gain, 18.9 dBm P1dB at 1950MHz. |
Stanford Microdevices |
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