No. |
Part Name |
Description |
Manufacturer |
1 |
ADSP-21065L |
SHARC, 198 MFLOPS, 3.3v Data Sheet (Rev C, 06/2003) |
Analog Devices |
2 |
ADSP-21065LCCA-240 |
Low-Cost SHARC, 66 MHz, 198 MFLOPS, 3.3v, Floating Point |
Analog Devices |
3 |
CD9011I |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE |
Continental Device India Limited |
4 |
CD9018I |
0.400W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.030A Ic, 132 - 198 hFE |
Continental Device India Limited |
5 |
IRF7946 |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 198 amperes optimized with low on resistance. |
International Rectifier |
6 |
IRF7946TRPBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 198 amperes optimized with low on resistance. |
International Rectifier |
7 |
P4KE180C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
8 |
P4KE220C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
9 |
P6KE180 |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
10 |
P6KE180C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
11 |
P6KE220C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| | | |