No. |
Part Name |
Description |
Manufacturer |
1 |
1G-106 |
TRANSITRON 1G106 OUTLINE |
Transitron Electronic |
2 |
1G-111 |
TRANSITRON 1G111 OUTLINE |
Transitron Electronic |
3 |
1G-114 |
TRANSITRON 1G114 OUTLINE |
Transitron Electronic |
4 |
1G-118 EPOXY |
TRANSITRON 1G118 EPOXY OUTLINE |
Transitron Electronic |
5 |
1G-32 |
TRANSITRON 1G32 OUTLINE |
Transitron Electronic |
6 |
1G-65 |
TRANSITRON 1G65 OUTLINE |
Transitron Electronic |
7 |
1G-76 |
TRANSITRON 1G76 OUTLINE |
Transitron Electronic |
8 |
1N5149 |
Step-recovery power varactor diode 11W 1GHz |
Motorola |
9 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
10 |
1N5150 |
Step-recovery power varactor diode 24W 1GHz |
Motorola |
11 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
12 |
2N5108 |
NPN silicon high frequency transistor 1.0W - 1GHz |
Motorola |
13 |
2N6603 |
NPN silicon high frequency transistor NF=2.0dB - 1GHz |
Motorola |
14 |
41024 |
1W 1GHz Silicon NPN Overlay RF Transistor |
RCA Solid State |
15 |
ADG918BCP |
Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches |
Analog Devices |
16 |
ADG919BCP |
Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches |
Analog Devices |
17 |
ADSP-BF607 |
Blackfin Dual-Core Processor up to 1GHz for High Performance Digital Signal Processing Applications |
Analog Devices |
18 |
ADSP-BF608 |
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for VGA Video Analytics |
Analog Devices |
19 |
ADSP-BF609 |
Blackfin Dual-Core Processor up to 1GHz with Hardware Support for HD Video Analytics |
Analog Devices |
20 |
AN642 |
Analog-to-Digital Converter Captures 1Gsps |
MAXIM - Dallas Semiconductor |
21 |
AT-00572 |
Up to 1GHz General Purpose NPN Silicon Bipolar Transistor |
AVANTEK |
22 |
AT-01672 |
Up to 1GHz General Purpose NPN Silicon Bipolar Transistor |
AVANTEK |
23 |
AT-41472 |
Up to 1GHz Low Noise NPN Silicon Bipolar Transistor |
AVANTEK |
24 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
25 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
26 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
27 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
28 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
29 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
30 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
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