| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1PS66SB62 |
1PS66SB62; 1PS76SB62; 40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 2 |
1PS66SB63 |
1PS66SB63; 1PS79SB63; 5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 3 |
1PS66SB82 |
1PS66SB82; 1PS88SB82; 15 V, 30 mA low Cd Schottky barrier diodes |
Philips |
| 4 |
1PS79SB17 |
1PS76SB17; 1PS79SB17; 4 V, 30 mA low C_d Schottky barrier diode |
Philips |
| 5 |
681-1D, 1N, 1P |
Center Tap |
Microsemi |
| 6 |
689-1D, 1N, 1P |
Center Tap |
Microsemi |
| 7 |
804-1D, 1N, 1P |
Center Tap |
Microsemi |
| 8 |
FP1/2P, 1P, 2P, 3P, 69P |
Pulse Withstanding Protective, Lightning Withstanding Characteristics along with Resistor Functionality, Sharper Fusing Characteristic than the Standard Flameproof Product Line (Fusible), Protects Against Electrical Hazards |
Vishay |
| 9 |
ICE 1PCS01 |
Power Factor Correction (PFC) Control IC for Continuous Conduction Mode (CCM) |
Infineon |
| 10 |
ICE 1PCS01G |
Power Factor Correction (PFC) Control IC for Continuous Conduction Mode (CCM) |
Infineon |
| 11 |
IRHLUC7670Z4 |
60V 100kRad Hi-Rel Dual 1N 1P Channel TID Hardened MOSFET in a LCC-6 package |
International Rectifier |
| 12 |
IRHLUC7670Z4SCS |
60V 100kRad Hi-Rel Dual 1N 1P Channel TID Hardened MOSFET in a LCC-6 package |
International Rectifier |
| 13 |
MMBT2222A |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 1P |
Samsung Electronic |
| 14 |
RU 1P |
Ultra-Fast-Recovery Rectifier Diodes(600 to 1000V) |
Sanken |
| 15 |
SY346/0,5-to-SY346/10 |
Fast Si rectifier diodes, possibly equivalent 1P643...1P649 |
RFT |
| 16 |
SY347/0,5-to-SY347/10 |
Fast Si rectifier diodes, possibly equivalent 1P643...1P649 |
RFT |
| | | |
