| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5954 |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2 |
1N5954A |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 3 |
1N5954C |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 4 |
1N5954D |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 5 |
2301 |
1.5 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
| 6 |
2301-2 |
1.5 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
| 7 |
2304 |
4 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
| 8 |
2304-2 |
4 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
| 9 |
2307-2 |
7 W, 20 V, 2.3 GHz, microwave CW bipolar |
Acrian |
| 10 |
274.062 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/16. Nominal resistance cold 2.32 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 11 |
274.200 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 2/10. Nominal resistance cold 2.30 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 12 |
40898 |
6W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 13 |
40899 |
2W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 14 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 15 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
| 16 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 17 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 18 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 19 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 20 |
A-5580E |
Common anode hi.effi red 2.3 inch, 5x8 dot matrix display |
PARA Light |
| 21 |
A-5580EG |
Common anode hi.effi red/green 2.3 inch, 5x8 dot matrix display |
PARA Light |
| 22 |
A-5580G |
Common anode green 2.3 inch, 5x8 dot matrix display |
PARA Light |
| 23 |
A-5580H |
Common anode red 2.3 inch, 5x8 dot matrix display |
PARA Light |
| 24 |
A-5580SR |
Common anode super red 2.3 inch, 5x8 dot matrix display |
PARA Light |
| 25 |
A-5580Y |
Common anode yellow 2.3 inch, 5x8 dot matrix display |
PARA Light |
| 26 |
A-5880E |
Common anode hi.effi red 2.3 inch, 8x8 dot matrix display |
PARA Light |
| 27 |
A-5880G |
Common anode green 2.3 inch, 8x8 dot matrix display |
PARA Light |
| 28 |
A-5880H |
Common anode red 2.3 inch, 8x8 dot matrix display |
PARA Light |
| 29 |
A-5880SR |
Common anode super red 2.3 inch, 8x8 dot matrix display |
PARA Light |
| 30 |
A-5880Y |
Common anode yellow 2.3 inch, 8x8 dot matrix display |
PARA Light |
| | | |
