| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4747 |
20.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 2 |
1N4747 |
1 W silicon zener diode. Nominal zener voltage 20.0 V. |
Fairchild Semiconductor |
| 3 |
1N4747A |
20.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 4 |
1N5250 |
500 mW silicon zener diode. Nominal zener voltage 20.0 V. |
Fairchild Semiconductor |
| 5 |
1N5250B |
20.0V 500 mW Zener Diode |
Continental Device India Limited |
| 6 |
1N5540A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N5540B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
| 9 |
1N968 |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 10 |
1N968 |
500 mW silicon planar zener diode. Max zener voltage 20.0 V. |
Fairchild Semiconductor |
| 11 |
1N968A |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 12 |
1N968B |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 13 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 14 |
BD157 |
20.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
| 15 |
BD158 |
20.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
| 16 |
BD159 |
20.000W Power NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
| 17 |
BD165 |
20.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD166 |
Continental Device India Limited |
| 18 |
BD166 |
20.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD165 |
Continental Device India Limited |
| 19 |
BD167 |
20.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD168 |
Continental Device India Limited |
| 20 |
BD168 |
20.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD167 |
Continental Device India Limited |
| 21 |
BD169 |
20.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Complementary BD170 |
Continental Device India Limited |
| 22 |
BD170 |
20.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Complementary BD169 |
Continental Device India Limited |
| 23 |
BGD104E |
CATV power-doubler amplifier module 20.0dB gain operating at frequencies up to 450MHz |
Philips |
| 24 |
BUK7M20-40H |
N-channel 40 V, 20.0 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
| 25 |
BUK9M20-40H |
N-channel 40 V, 20.0 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 26 |
CLL5250A |
20.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 27 |
CLL5250B |
20.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 28 |
CLL968A |
20.0V General Purpose 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 29 |
CMBZ5250B |
20.0V 300mW SMD Dual Zener Diode |
Continental Device India Limited |
| 30 |
CMM-10 |
2.0 TO 20.0 GHz GAAS MMIC POWER AMPLIFIER |
CELERITEK |
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