No. |
Part Name |
Description |
Manufacturer |
1 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
2 |
20DZ10 |
Silicon Zener diode 20W |
IPRS Baneasa |
3 |
20DZ100 |
Silicon zener diode 20W |
IPRS Baneasa |
4 |
20DZ12 |
Silicon Zener diode 20W |
IPRS Baneasa |
5 |
20DZ120 |
Silicon zener diode 20W |
IPRS Baneasa |
6 |
20DZ15 |
Silicon Zener diode 20W |
IPRS Baneasa |
7 |
20DZ150 |
Silicon zener diode 20W |
IPRS Baneasa |
8 |
20DZ18 |
Silicon Zener diode 20W |
IPRS Baneasa |
9 |
20DZ180 |
Silicon zener diode 20W |
IPRS Baneasa |
10 |
20DZ22 |
Silicon Zener diode 20W |
IPRS Baneasa |
11 |
20DZ27 |
Silicon zener diode 20W |
IPRS Baneasa |
12 |
20DZ33 |
Silicon zener diode 20W |
IPRS Baneasa |
13 |
20DZ39 |
Silicon zener diode 20W |
IPRS Baneasa |
14 |
20DZ47 |
Silicon zener diode 20W |
IPRS Baneasa |
15 |
20DZ56 |
Silicon zener diode 20W |
IPRS Baneasa |
16 |
20DZ68 |
Silicon zener diode 20W |
IPRS Baneasa |
17 |
20DZ6V8 |
Silicon Zener diode 20W |
IPRS Baneasa |
18 |
20DZ8 |
Silicon Zener diode 20W |
IPRS Baneasa |
19 |
20DZ82 |
Silicon zener diode 20W |
IPRS Baneasa |
20 |
2N5641 |
7W / 20W / 40W, 28V, VHF POWER TRANSISTOR |
ST Microelectronics |
21 |
2N5642 |
NPN silicon RF power transistor 20W - 175MHz |
Motorola |
22 |
2N5642 |
7W / 20W / 40W, 28V, VHF POWER TRANSISTOR |
ST Microelectronics |
23 |
2N5643 |
7W / 20W / 40W, 28V, VHF POWER TRANSISTOR |
ST Microelectronics |
24 |
2N5848 |
NPN silicon RF power transistor 20W 50MHz |
Motorola |
25 |
2N6263 |
Medium power silicon N-P-N transistor. 140V, 20W. |
General Electric Solid State |
26 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
27 |
2SC3560 |
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
28 |
2SC3561 |
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
29 |
2SD1414 |
4A; 20W; V(ceo): 80V; NPN darlington transistor |
TOSHIBA |
30 |
2SK612 |
V(dss): 100V; 20W; fast switching N-channel silicon power MOS FET. For industrial use |
NEC |
| | | |