No. |
Part Name |
Description |
Manufacturer |
1 |
0204-125 |
125 W, 28 V, 225-400 MHz, balanced transistor |
Acrian |
2 |
0204-125 |
125 W, 28 V, 225-400 MHz common emitter transistor |
GHz Technology |
3 |
0204-125-2 |
125 W, 28 V, 225-400 MHz, balanced transistor |
Acrian |
4 |
0204-125-3 |
125 W, 28 V, 225-400 MHz, balanced transistor |
Acrian |
5 |
0204-125-4 |
125 W, 28 V, 225-400 MHz, balanced transistor |
Acrian |
6 |
0662.200HXLL |
LT-5 tm fast-acting fuse. Long lead (bulk) 100 pieces. Ampere rating .200, voltage rating 250, nominal resistance cold ohms 2255. |
Littelfuse |
7 |
0662.200HXSL |
LT-5 tm fast-acting fuse. Short lead (bulk) 100 pieces. Ampere rating .200, voltage rating 250, Nominal resistance cold ohms 2255. |
Littelfuse |
8 |
0662.200ZRLL |
LT-5 tm fast-acting fuse. Long lead (tape and reel) 750 pieces. Ampere rating .200, voltage rating 250, nominal resistance cold ohms 2255. |
Littelfuse |
9 |
1.5FMCJ250 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 225V(min), 275V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
10 |
1.5KE250 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 225V(min), 275V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
11 |
1.5KE250C |
Transient voltage suppressor. 1500 W. Breakdown voltage 225.0 V(min), 275.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
12 |
1504-225D |
Delay 225 +/-12 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
13 |
1N5196 |
Diode Switching 225V 0.2A 2-Pin DO-35 |
New Jersey Semiconductor |
14 |
2N3738 |
Trans GP BJT NPN 225V 1A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
15 |
2N5809 |
Trans GP BJT NPN 225V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
16 |
2N6211 |
Trans GP BJT PNP 225V 5A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
17 |
2N6211-13 |
Trans GP BJT PNP 225V 5A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
18 |
2N6233 |
Trans GP BJT NPN 225V 10A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
19 |
2N6424 |
Trans GP BJT PNP 225V 1A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
20 |
2N6424 |
PNP transistor, 225V, 0.25A |
SemeLAB |
21 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
22 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
23 |
2N684 |
25A silicon controlled rectifier. Vrsom 225V. |
General Electric Solid State |
24 |
AD8114 |
Low Cost 225 MHz 16 x 16 Crosspoint Switch, G=+1 |
Analog Devices |
25 |
AD8114-EB |
Low Cost 225 MHz 16 X 16 Crosspoint Switches |
Analog Devices |
26 |
AD8114-EVAL |
Low Cost 225 MHz 16 x 16 Crosspoint Switch, G=+1 |
Analog Devices |
27 |
AD8114AST |
Low Cost 225 MHz 16 X 16 Crosspoint Switches |
Analog Devices |
28 |
AD8115 |
Low Cost 225 MHz 16 x 16 Crosspoint Switch, G=+2 |
Analog Devices |
29 |
AD8115-EB |
Low Cost 225 MHz 16 X 16 Crosspoint Switches |
Analog Devices |
30 |
AD8115-EVAL |
Low Cost 225 MHz 16 x 16 Crosspoint Switch, G=+2 |
Analog Devices |
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