| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KA24 |
Automotive Transient Voltage Suppressors Breakdown Voltage 24V, Peak Pulse Power 1500W |
Vishay |
| 2 |
1.5KA24A |
Automotive Transient Voltage Suppressors Breakdown Voltage 24V, Peak Pulse Power 1500W |
Vishay |
| 3 |
1/4M24Z |
Zener Diode 1/4W 24V |
Motorola |
| 4 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 5 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 6 |
15KP24 |
Diode TVS Single Uni-Dir 24V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 7 |
15KP24A |
Diode TVS Single Uni-Dir 24V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 8 |
15KP24C |
Diode TVS Single Bi-Dir 24V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 9 |
15KP24CA |
Diode TVS Single Bi-Dir 24V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 10 |
15KPA24 |
Diode TVS Single Uni-Dir 24V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 11 |
15KPA24A |
Diode TVS Single Uni-Dir 24V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 12 |
15KPA24C |
Diode TVS Single Bi-Dir 24V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 13 |
15KPA24CA |
Diode TVS Single Bi-Dir 24V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 14 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 15 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 16 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 17 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 18 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 19 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 20 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 21 |
1N1360 |
Zener Diode 24V |
Motorola |
| 22 |
1N1360 |
Diode Zener Single 24V 10% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 23 |
1N1360A |
Zener Diode 24V |
Motorola |
| 24 |
1N1360A |
Diode Zener Single 24V 5% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 25 |
1N1780 |
Zener Diode 24V |
Motorola |
| 26 |
1N1780A |
Zener Diode 24V |
Motorola |
| 27 |
1N1822 |
Zener Diode 24V 10W |
Motorola |
| 28 |
1N1822 |
Diode Zener Single 24V 10% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 29 |
1N1822 |
Diffused silicon power zener diodes 10W 24V |
Texas Instruments |
| 30 |
1N1822A |
Zener Diode 24V 10W |
Motorola |
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