| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor |
GHz Technology |
| 2 |
1503-25A |
Max delay 25 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 3 |
1503-25G |
Max delay 25 ns, Mechanically variable delay line |
Data Delay Devices Inc |
| 4 |
1504-25A |
Delay 25 +/-1.3 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 5 |
1504-25D |
Delay 25 +/-1.3 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 6 |
1513-25A |
Delay 25 +/-1.3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 7 |
1514-25A |
Delay 25 +/-1.3 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 8 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
| 9 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 10 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 11 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 12 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
| 13 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 14 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 15 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 16 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 17 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 18 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 19 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 20 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 21 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 22 |
1N5253 |
500mW, 25 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 23 |
1N5253AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 25 V. Tolerance +-10%. |
Microsemi |
| 24 |
1N5253BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 25 V. Tolerance +-5%. |
Microsemi |
| 25 |
1N5253UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 25 V. |
Microsemi |
| 26 |
1N5368B |
47 V, 25 mA, 5 W glass passivated zener diode |
Fagor |
| 27 |
1N5369B |
51 V, 25 mA, 5 W glass passivated zener diode |
Fagor |
| 28 |
1N5929 |
1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 29 |
1N5929A |
1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 30 |
1N5929C |
1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| | | |
