| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5145A |
Diode VAR Cap Single 60V 25.7pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 2 |
1N5253 |
500 mW silicon zener diode. Nominal zener voltage 25.0 V. |
Fairchild Semiconductor |
| 3 |
1N5253B |
25.0V 500 mW Zener Diode |
Continental Device India Limited |
| 4 |
1N5543A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 5 |
1N5543B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 6 |
1N5644A |
Diode TVS Single Uni-Dir 25.6V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 7 |
1N6118 |
Diode TVS Single Bi-Dir 25.1V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 8 |
1N6118A |
Diode TVS Single Bi-Dir 25.1V 500W 2-Pin |
New Jersey Semiconductor |
| 9 |
1N6154 |
Diode TVS Single Bi-Dir 25.1V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 10 |
1N6154A |
Diode TVS Single Bi-Dir 25.1V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 11 |
1N6282A |
Diode TVS Single Uni-Dir 25.6V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12 |
1N6379 |
Zener 25.9V 1500W |
ON Semiconductor |
| 13 |
1N6379RL4 |
Zener 25.9V 1500W |
ON Semiconductor |
| 14 |
APT4015AVR |
POWER MOS V 400V 25.5A 0.150 Ohm |
Advanced Power Technology |
| 15 |
ATV7050 |
Linear Power Amplifier 30W, 470-860MHz 25.5V |
Motorola |
| 16 |
BD233 |
25.000W Switching NPN Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
| 17 |
BD234 |
25.000W Switching PNP Plastic Leaded Transistor. 45V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
| 18 |
BD235 |
25.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
| 19 |
BD236 |
25.000W Switching PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
| 20 |
BD237 |
25.000W Switching NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
| 21 |
BD238 |
25.000W Switching PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 25 hFE. |
Continental Device India Limited |
| 22 |
BGS67 |
65 MHz, 25.5 dB gain reverse amplifier |
Philips |
| 23 |
BGS67A |
65 MHz, 25.5 dB gain reverse amplifier |
Philips |
| 24 |
CDB1370 |
25.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 25 |
CFA1012 |
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFC2562 |
Continental Device India Limited |
| 26 |
CFA1012O |
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O |
Continental Device India Limited |
| 27 |
CFA1012Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y |
Continental Device India Limited |
| 28 |
CFC2562 |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012 |
Continental Device India Limited |
| 29 |
CFC2562O |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O |
Continental Device India Limited |
| 30 |
CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y |
Continental Device India Limited |
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