No. |
Part Name |
Description |
Manufacturer |
1 |
0663.080HXLL |
LT-5 tm time lag fuse. Long lead (bulk) 100 pieces. Ampere rating .080, voltage rating 250, nominal resistance cold ohms 2648. |
Littelfuse |
2 |
0663.080HXSL |
LT-5 tm time lag fuse. Short lead (bulk) 100 pieces. Ampere rating .080, voltage rating 250, nominal resistance cold ohms 2648. |
Littelfuse |
3 |
0663.080ZRLL |
LT-5 tm time lag fuse. Long lead (tape and reel) 750 pieces. Ampere rating .080, voltage rating 250, nominal resistance cold ohms 2648. |
Littelfuse |
4 |
1.5FMCJ250A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 237V(min), 263V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
5 |
1.5KE250A |
237- 263V transient voltage suppressor |
DC Components |
6 |
1.5KE250A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 237V(min), 263V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
7 |
1.5KE250CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 237.0 V(min), 263.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
8 |
15KP150 |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
9 |
15KP150C |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. |
Panjit International Inc |
10 |
15KP26 |
Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
11 |
15KP260 |
Diode TVS Single Uni-Dir 260V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
12 |
15KP260A |
Diode TVS Single Uni-Dir 260V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
13 |
15KP260C |
Diode TVS Single Bi-Dir 260V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
14 |
15KP260CA |
Diode TVS Single Bi-Dir 260V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
15 |
15KP26A |
Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
16 |
15KP26C |
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
17 |
15KP26CA |
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
18 |
15KPA26 |
Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
19 |
15KPA26A |
Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
20 |
15KPA26C |
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
21 |
15KPA26CA |
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
22 |
1617AB15 |
15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz |
GHz Technology |
23 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
24 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
25 |
1N5107 |
Zener Diode 260V 1W |
Motorola |
26 |
1N5107 |
Diode Zener Single 260V 5% 3W 2-Pin Case A |
New Jersey Semiconductor |
27 |
1N5129 |
Zener Diode 260V 3W |
Motorola |
28 |
1N5645 |
Diode TVS Single Uni-Dir 26.8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
29 |
1N6051 |
Diode TVS Single Bi-Dir 26V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
30 |
1N6283 |
Diode TVS Single Uni-Dir 26.8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
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