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Datasheets for 26

Datasheets found :: 1601
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 0663.080HXLL LT-5 tm time lag fuse. Long lead (bulk) 100 pieces. Ampere rating .080, voltage rating 250, nominal resistance cold ohms 2648. Littelfuse
2 0663.080HXSL LT-5 tm time lag fuse. Short lead (bulk) 100 pieces. Ampere rating .080, voltage rating 250, nominal resistance cold ohms 2648. Littelfuse
3 0663.080ZRLL LT-5 tm time lag fuse. Long lead (tape and reel) 750 pieces. Ampere rating .080, voltage rating 250, nominal resistance cold ohms 2648. Littelfuse
4 1.5FMCJ250A Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 237V(min), 263V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
5 1.5KE250A 237- 263V transient voltage suppressor DC Components
6 1.5KE250A GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 237V(min), 263V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
7 1.5KE250CA Transient voltage suppressor. 1500 W. Breakdown voltage 237.0 V(min), 263.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
8 15KP150 Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. Panjit International Inc
9 15KP150C Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/211.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 268 V @ Ipp = 56 A. Panjit International Inc
10 15KP26 Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case 5A New Jersey Semiconductor
11 15KP260 Diode TVS Single Uni-Dir 260V 15KW 2-Pin Case 5A New Jersey Semiconductor
12 15KP260A Diode TVS Single Uni-Dir 260V 15KW 2-Pin Case 5A New Jersey Semiconductor
13 15KP260C Diode TVS Single Bi-Dir 260V 15KW 2-Pin Case 5A New Jersey Semiconductor
14 15KP260CA Diode TVS Single Bi-Dir 260V 15KW 2-Pin Case 5A New Jersey Semiconductor
15 15KP26A Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case 5A New Jersey Semiconductor
16 15KP26C Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case 5A New Jersey Semiconductor
17 15KP26CA Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case 5A New Jersey Semiconductor
18 15KPA26 Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case P600 T/R New Jersey Semiconductor
19 15KPA26A Diode TVS Single Uni-Dir 26V 15KW 2-Pin Case P600 Tape and Ammo New Jersey Semiconductor
20 15KPA26C Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case P600 T/R New Jersey Semiconductor
21 15KPA26CA Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case P600 Tape and Ammo New Jersey Semiconductor
22 1617AB15 15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz GHz Technology
23 1617AB5 5 W, 26 V, 1600-1700 MHz common emitter transistor GHz Technology
24 1920A05 5 W, 26 V, 1930-1990 MHz common emitter transistor GHz Technology
25 1N5107 Zener Diode 260V 1W Motorola
26 1N5107 Diode Zener Single 260V 5% 3W 2-Pin Case A New Jersey Semiconductor
27 1N5129 Zener Diode 260V 3W Motorola
28 1N5645 Diode TVS Single Uni-Dir 26.8V 1.5KW 2-Pin DO-13 New Jersey Semiconductor
29 1N6051 Diode TVS Single Bi-Dir 26V 1.5KW 2-Pin DO-13 New Jersey Semiconductor
30 1N6283 Diode TVS Single Uni-Dir 26.8V 1.5KW 2-Pin Case 1 New Jersey Semiconductor


Datasheets found :: 1601
Page: | 1 | 2 | 3 | 4 | 5 |



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